Vertical GaN Reverse Trench-Gate Power MOSFET and DC-DC Converter
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Transactions on Electrical and Electronic Materials https://doi.org/10.1007/s42341-020-00248-2
REGULAR PAPER
Vertical GaN Reverse Trench‑Gate Power MOSFET and DC‑DC Converter Nilesh Kumar Jaiswal1 · V. N. Ramakrishnan1 Received: 30 April 2020 / Revised: 25 September 2020 / Accepted: 5 October 2020 © The Korean Institute of Electrical and Electronic Material Engineers 2020
Abstract A vertical GaN reverse trench-gate power MOSFET (RT-MOSFET) device is proposed. This Vertical RT-MOSFET features the negative incline of broaden-trench sidewalls at the bottom of the gate. Numerical device simulations using TCAD have been carried out for device and circuit performance study and analysis. The device performance like transfer characteristics, on-state, off-state characteristics, capacitance–voltage characteristics is observed. The simulation results are shown in comparison to the conventional such as perpendicular trench-gate (UT), and trapezoidal trench-gate (VT)-MOSFET devices. The RT-MOSFET has a ~ 9% and ~ 20% reduced on-state resistance ( Ron), ~ 6% and ~ 10% enhanced electrical breakdown 2 voltage (Vbr), and ~ 21% and ~ 46% superior Baliga’s figure of merits ( Vbr ∕Ron )compared to UT-MOSFET and VT-MOSFET, respectively. Next, we obtain lower energy loss using TCAD Mixed-mode simulation for DC-DC boost converter circuit performance with different voltage. The RT-MOSFET saves ~ 30% and ~ 76% energy loss at 100 V, ~ 43%, and ~ 75% energy loss at 200 V and ~ 54% and ~ 87% energy loss at 400 V during DC-DC converter application compared to UT-MOSFET and VT-MOSFET, respectively. Keywords Vertical GaN · Trench gate · Power MOSFET · Breakdown voltage · On-resistance · Boost converter
1 Introduction Work on wide-bandgap semiconductors has an enormous future which includes efficient and compact power chips [1]. Their ability to operate at high temperatures, high power densities, and high voltages makes them interesting for its use in future electronic power conversion systems [2]. GaN is one of the best materials due to its characteristics such as high-saturation velocity (2.7 × 1 07 cm/s), channel-gate insulator interface, and high-critical electric point ( Ecr = 3.3 MV/cm) [3]. Lateral GaN transistors with 100 V, 600 V, and 650 V were largely explored and are easily available in the market arena, which device is best suited for various switching applications [4]. However, the lateral GaN transistor suffers from poor thermal handling, charge trapping effects, high stress, have reliability issues, like current collapse incident, large leakage current, and premature electrical-breakdown [5, 6]. The vertical GaN transistors are a
* V. N. Ramakrishnan [email protected] 1
Department of Micro and Nanoelectronics, SENSE, Vellore Institute of Technology, Vellore, Tamilnadu 632014, India
better and appreciable option for medium-and-high power applications with more than 1.2–2.0 kV [7–10] breakdown. Many potent types of vertical GaN structures are well established to date. Initially, the planar vertical currentaper
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