2D Nanoelectronics: Physics and Devices of Atomically Thin Materials Mircea Dragoman and Daniela Dragoman
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function, lens aberration, and image processing methods, as well as diffraction theory for a plane wave (TEM) and in convergent-beam electron diffraction. With these theoretical chapters located at the end of the book, the author is able to focus on the concepts important to imaging at the nanoscale in Parts I and II. The included figures, both electron microscopy photographs as well as schematics, are useful to understand the material covered. The references in each chapter are up to date. The problems included in the book are helpful for students, although I would have liked to have
2D Nanoelectronics: Physics and Devices of Atomically Thin Materials Mircea Dragoman and Daniela Dragoman Springer, 2017 199 pages, $149.99 (e-book $109.00) ISBN 978-3-319-48435-8
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his is an excellent book on devices based on graphene and other twodimensional (2D) materials, such as MoS2, including their physics and applications. The book contains three chapters covering the fabrication and characterization of 2D materials, transistors, and other nanodevices and acts as a user guide for researchers working with atomically thin materials in applied physics. Chapter 1 consists of four parts discussing physics and applications of graphenebased nanostructures and their applications in optoelectronics and sensors. The chapter starts with bondings between atomic orbitals, interaction between carbon atoms, their allowed energy states, and the density of charge carriers derived using a quantum mechanical approach. Functionality of graphene-based field-effect transistors (FETs), diodes, detectors and receivers, sensors, and photonic devices are discussed. Allowed energy states, density of states, carrier density, mobility, and other physics parameters in these nanodevices are derived by employing the tight-binding approximation, Drude model, and Dirac spinor
method. Gate voltage-dependent current– voltage (I–V) characteristics of graphene FETs are well explained. Conduction mechanisms, current density equations, and I–V characteristics of various types of graphene-based diodes are also covered. Chapter 2 deals with various growth process mechanisms of 2D materials, such as chemical vapor deposition, physical vapor deposition, bottom-up approach, and top-down method. Growth of transition metal dichalcogenides (TMDs), semimetal chalcogenides, and 2D alloys are covered. Typical mechanical properties and optical properties are tabulated with the help of literature. Band diagrams of several TMDs, thickness-dependent band structures, band structures of bilayer-monolayer TMDs, vertical heterostructures, photoexcited heterostructures, and van der Waals heterostructures are discussed. Electronic devices such as transistors, diodes, and optoelectronic devices based on atomically thin materials are covered in chapter 3. Schottky barriers at monolayers, unwanted tunnel currents, mobility, and other electrical properties in different
seen more problems in each chapter. The theoretical background is appropriate for graduate students in physical science.
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