A Non-Volatile Buffered Main Memory Using Phase-Change RAM
The new trends of memory semi-conductor technology are changing and developing. Phase-Change RAM (PRAM), Ferroelectric RAM (FeRAM), Magnetic RAM (MRAM) and Resistive RAM (RRAM) are going to take center stage of main memory material of new computer systems
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Abstract The new trends of memory semi-conductor technology are changing and developing. Phase-Change RAM (PRAM), Ferroelectric RAM (FeRAM), Magnetic RAM (MRAM) and Resistive RAM (RRAM) are going to take center stage of main memory material of new computer systems in next decade. PRAM also has higher dense, it can keep data about four times more than DRAM. But some problems caused when PRAM uses as a main memory directly. So we suggest Pre-load cache and Assistant buffer. It reduces main memory access and overcome low read speed of PRAM consequently. To reduce write operation also, we propose Assistant buffer. Assistant buffer keeps evicted data and impedes write operation, and facilitates more rapid response about required data when cache misses. As a result of our experimentation, overall performance is decrement of main memory accesses approximately 50 %.
Keywords Phase-change memory Main memory Cache Non-volatility Memory capacity Memory access latency
Buffer DRAM
D.-H. Lee (&) C.-P. Hong S.-D. Kim Department of Engineering, Yonsei University, 5-4, Sinchon-dong, Seodaemun-gu, Seoul, South Korea e-mail: [email protected] C.-P. Hong e-mail: [email protected] S.-D. Kim e-mail: [email protected]
K. J. Kim and K.-Y. Chung (eds.), IT Convergence and Security 2012, Lecture Notes in Electrical Engineering 215, DOI: 10.1007/978-94-007-5860-5_53, Ó Springer Science+Business Media Dordrecht 2013
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1 Introduction DRAM is main memory material of modern computer system. Requirement of applications and operating systems are increasing. They need larger size and lower latency of main memory. To satisfy their demands, a main memory is increasing its capacity. But it causes more energy consumption and heat problem. To cool off the system, air and temperature conditioning system’s energy consumption is increasing. These problems are huddle of computer system growth [1]. Memory semi-conductor technologies are developing and growing to resolve. PhaseChange RAM (PRAM), Ferroelectric RAM (FeRAM), Magnetic RAM (MRAM) and Resistive RAM (RRAM) are going to take center stage of main memory material of new computer systems in next decade. These non-volatile memories have some advantage. First, the memories consume lower power than DRAM. Mobile device like smart-phone is used widely and it involves DRAM main memory also. But mobile devices should not consumes much energy, so it is to be considered low power. Second, density of the memories is higher than DRAM. The memories can save same quantity of data use of fewer chips. It effects power consumption. Third, their major characteristic is non-volatility, which means it doesn’t need to be saved to disk when system power is turned off. It can reduce recovery after boot-up time significantly. But the memories have several issues to apply to use as a main memory. PRAM and any other RAMs are lower performance compared to DRAM. Read latency of PRAM is about 200–300 ns. Write speed is slower than DRAM also. If computer system uses PRA
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