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A Titanium Salicide Process Suitable for Submicron CMOS Applications

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A TITANIUM SALICIDE PROCESS SUITABLE FOR SUBMICRON CMOS APPLICATIONS C. BLAIR, E. DEMIRLIOGLU, E. YOON AND J. PIERCE Fairchild Research Center, National Semiconductor Corporation M/S E100, P.O. Box 58090 Santa Clara, CA 95052-8090, U.S.A. ABSTRACT This paper reports a titanium salicide process capable of fabricating low resistance salicide (

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