Abstracts of MRS Internet Journal of Nitride Semiconductor Research, Volume 1, Articles 26-34
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Internet Journal
Nitride of Semiconductor Research
An electronic, peer-reviewed journal published by the Materials Research Society. http://nsr.mij.mrs.org/
Volume 1, Articles 26-34
Editors-in-Chief: S. Strite, Cammy R. Abernathy [email protected] http://nsr.mij.mrs.org/1 / 2 6 / MOCVD Equipment for Recent Developments Towards the Blue and Green Solid State Laser H. Jurgensen1, D. Schmitz1, G. Strauch1, E. Woelk1, M. Dauelsberg2, L. Kadinski2, and Yu.N. Makarov2 1 AIXTRON GmbH 2 University of Erlangen-Nurnberg For the growth of an electrically pumped lasing nitride emitter, the development of the MOCVD equipment and the process are mutually dependent. Most important is the implementation of the rapid temperature changes that are required between the growth of the different layers of a device structure. Equally important is to provide a reaction chamber that develops a stable gas phase at all growth temperatures used in the process. In this paper we will give insight in the technology and the relationship between processes and equipment. The development of the reaction chamber was supported by mathematical modeling that formed the basis for the selection of appropriate process parameters for growth of group-Ill nitrides. The modeling consists of the numerical solution of the Navier-Stokes equations coupled with heat transfer and mass transport of the chemical species. The modeling of radiative heat transfer takes into account the effect of changing surface radiative properties. These changes result from the coating of the reactor inner surfaces during the growth run. Coupled flow dynamics and chemistry including homogeneous and heterogeneous reactions play an important role for predicting growth rate distributions on the susceptor area. At the practically used high temperatures, group-Ill metalorganics turn out to be almost entirely decomposed and it is the mass transport of these decomposition products to the growing layer that is assumed to control the growth rate in accordance with experimental observations. Order No. NS001-026 © 1996 MRS http://nsr.mij.mrs.org/1 / 2 7 / Temperature Distribution in the Chamber used for Crystal Growth of GaN under High Pressure of Nitrogen S. Krukowski High Pressure Research Center The theoretical analysis of high pressure influence on the conditions of crystal growth of GaN is presented. High pressure influence on the transport and equilibrium properties of nitrogen is estimated using scaling approach. Nitrogen gas properties are used in the finite element calculation of the thermal conditions in the high pressure chamber. The temper-
MIJ-NSR Abstracts
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ature distribution during GaN growth in the vertical temperature-gradient configuration is obtained. Order No. NS001-027 © 1996 MRS http://nsr.mij.mrs.org/1/28/ ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/lnGaN/AlGaN Heterostnictures Bedwyr Humphreys and Matthew Govett Oxford Instruments Plasma Technology A room temperature (RT) plasma etch process has
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