Abstracts of MRS Internet Journal of Nitride Semiconductor Research
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Nitride of Semiconductor Research An electronic, peer-reviewed journal published by the Materials Research Society. http://nsr.mij.mrs.org/
Volume 1, Articles 15-25
Editors-in-Chief: S. Strite, Cammy R. Abernathy [email protected] http://nsr.mij. mrs.org/1 / 1 5 / PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A Comparison to MOCVD-Grown GaN H. Angerer, 0. Ambacher, R. Dimitrov, Th. Metzger, W. Rieger, and M. Stutzmann Walter Schottky Institut, Technische Universitat Munchen Thin films of GaN on c-plane sapphire were grown by plasma-enhanced molecular beam epitaxy (PEMBE). The influence of different growth conditions on the quality of the epitaxial layers was studied by x-ray diffraction (XRD), atomic force microscopy (AFM), and Hall measurements. For low deposition temperatures, the growth of a thin buffer layer of AIN results in a decrease of the XRD rocking curve full width at half maximum (FWHM) but also in poorer quality in electronic and optical properties. Samples of 3 urn thickness with 570 arcsec FWHM in the XRD rocking curve, a near bandgap PL-emission FWHM at 5 K of 7 meV, charge carrier densities of ne = 2 x 1017 cm 3 , and Hall mobilities of 270 cm2/V s at 300 K were grown without a buffer layer. A comparison of the morphology and XRD rocking curves with those of GaN films deposited by metalorganic chemical vapor deposition (MOCVD) shows that the two methods have different growth mechanisms. Order No. NS001-0015 © 1996 MRS http://nsr.mij. mrs.org/1 / 1 6 / Growth of Ga-face and N-face GaN Rims Using ZnO Substrates E.S. Hellman, D.N.E. Buchanan, D. Wiesmann, and I. Brener Bell Laboratories, Lucent Technologies We have used plasma molecular beam epitaxy on (0001) and (0001) ZnO substrates to induce epitaxial growth of GaN of a known polarity. The polarity of the ZnO substrates can be easily and unambiguously determined by measuring the sign of the piezoelectric coefficient If we assume that N-face GaN grows on O-face ZnO and that Ga-face GaN grows on Zn-face ZnO, then we can study the growth of both Ga- and N-faces. The most striking difference is the doping behavior of the two faces. Growth on the Ga-face is characterized by a higher carrier concentration and a lower threshold for Ga droplet formation. Order No. NS001-0016 © 1996 MRS http://nsr.mij.mrs.org/1 /17/ Alternative N Precursors and Mg Doped GaN Grown by MOVPE B. Beaumont1, M. Vaille1, P. Lorenzini1, Pierre Gibart1, T. Boufaden2, and B. eljani2 1 CRHEA-CNRS 2 Faculte des Sciences In this paper, we address two different aspects relevant to the growth of
MIJ-NSR Abstracts
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GaN. The first part concerns alternative nitrogen source whereas in the second part, we report experimental results on Mg doping. Several nitrogen precursors have been used for the growth of GaN in MOVPE. To produce active species from N2 or NH3, a remote plasma-enhanced chemical vapor deposition (RPECVD) process has been implemented. In addition, nitrogen organic precursors, triethylamine and t-butylami
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