Abstracts of MRS Internet Journal of Nitride Semiconductor Research , Volume 4, Articies 1-16
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IMIRIS Internet
Nitride of Semiconductor Research
An electronic, peer-reviewed joumal published by the Materials Research Society. http://nsr.mij.mrs.org/
Volume 4, Articles 1-16
Editor-in-Chief: CR. Abernathy [email protected]
MIJ-NSR Abstracts
Journalmaster: E.S. Hellman [email protected]
http://nsr.mij.mrs.org/4/1 / Characteristic of InGaN/GaN Laser Diode Grown by a MuM-Wafer MOCVD System Y. Park, B.J. Kim, J.W. Lee, O.H. Nam, C. Sone, H. Park, Eunsoon Oh, H. Shin, S. Chae, J. Cho, Ig-Hyeon Kim, J.S. Khim, S. Cho, and I I . Kim Samsung Advanced Institute of Technology InGaN/GaN multi-quantum well (MQW) laser diodes (LDs) were grown on c-plane sapphire Substrates using a multi-wafer MOCVD System. The threshold current for pulsed lasing was 1.6 A for a gain-guided laser diode with a stripe of 10 x 800 pm2. The threshold current density was 20.3 kA c m 2 and the threshold voltage was 16.5 V. The optical power ratio of transverse electric mode to transverse magnetic mode was found to be greater than 50. The characteristic temperature measured from the plot of threshold current versus measurement temperature was between 130 and 150K. Order No. NS004-001 ©1999 MRS
http://nsr.mij.mrs.org/4/3/ A GaN/4H-SiC Heterojunction Bipolar Transistor with Operation up to 300°C J.T. Torvik1, M. Leksono1,J.I. Pankove1, and B. Van Zeghbroeck2 ^tralux Inc. 2 Universiry of Colorado We report on the fabrication and characterization of GaN/4H-SiC n-p-n heterojunction bipolar transistors (HBTs). The device structure consists of an n-SiC collector, p-SiC base, and selectively grown n-GaN emitter. The HBTs were grown using metalorganic chemical vapor deposition on SiC Substrates. Selective GaN growth through a Si02 mask was used to avoid damage that would be caused by reactive ion etching. In this report, we demonstrate common base transistor Operation with a modest de current gain of 15 at room temperature and 3 at 300°C. Order No. NS004-003 ©1999 MRS
http://nsr.miJ.mrs.org/4/2/ Structural and Optical Properties of GaN Lateralry Overgrown on Si(H1) by Metalorganic Chemical Vapor Deposition Using an AIN Buffer Layer H. Marchand1, N. Zhang1, L. Zhao1, Y. Golan1, S.J. Rosner2, G. Girolami2, P.T. Fini3,J.R Ibbetson3, S. Keller3, S. DenBaars3,J.S. Speck3, and U.K. Mishra3 1 Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara 2 Hewlett-Packard Laboratories, Palo Alto 3 Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara Lateral epitaxial overgrowth (LEO) on Si(111) Substrates using an AIN buffer layer is demonstrated and characterized using scanning electron microscopy, atomic force microscopy, transmission electron microscopy, x-ray diffraction, photoluminescence spectroscopy, and cathodoluminescence imaging. The (1l00)-oriented LEO GaN stripes grown on Silicon Sub strates are shown to have similar structural properties as LEO GaN grown on GaN/AI203 Substrates: the surf3ce topography is characterized by continuous cr
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