Abstracts of MRS Internet Journal of Nitride Semiconductor Research
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M Internet Journal
Nitride of Semiconductor Research
An electronic, peer-reviewed journal published by the Materials Research Society. http://nsr.mij.mrs.org/
Volume 1, Articles 1-14
Editors-in-Chief: S. Strite, Cammy R. Abernathy [email protected] http://nsr.mij.mrs.org/1 /1 / ScAlMgO4: An Oxide Substrate for GaN Epitaxy E. S. Hellman, C. D. Brandle, L. F. Schneemeyer, D. Wiesmann, I. Brener, T. Siegrist, G. W. Berkstresser, D. N. E. Buchanan, and E. H. Hartford, Jr. AT&T Bell Laboratories We report the use of ScAIMgO4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17 mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAIMgO4 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3 X 3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAIMgO4. Order No.: NS001 -001 © 1996 MRS http://nsr.mij.mrs.org/1 / 2 / Free Excitons in GaN B. Monemar1, J. P. Bergman1,1. A. Buyanova, W. Li1, H. Amano2, and I. Akasaki2 1 Department of Physics and Measurement Technology, Linkoping University department of Electrical and Electronic Engineering, Meijo University Optical spectra on free exciton properties for GaN are presented and discussed, in particular the influence of epitaxial strain and temperature. The exciton-phonon coupling is also manifested via the temperature dependence of the LO phonon replicas of the free exciton. Order No.: NS001 -002 © 1996 MRS http://nsr.mij.mrs.org/i / 3 / Study of GaN Films Grown by Metalorganic Chemical Vapour Deposition W. Van der Stricht1,1. Moerman1, P. Demeester1. J. A. Crawley2, and E.J. Thrush2 1 Department of Information Technology, University of Ghent-IMEC 2 Thomas Swan & Co., Ltd. In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the
MIJ-NSR Abstracts
• Journalmaster: E. S. Hellman [email protected]
film quality are discussed. The results on n-type doping of GaN with SiH4 are presented. The GaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation. Order No.: NS001-003 © 1996 MRS http://nsr.mij.mrs.org/1 / 4 / Research on GaN MODFETs L Eastman1, J. Burm1, W. Schaff1, M. Murphy1, K. Chu1. H. Amano2, and I. Akasaki2 department of Electrical Engineering, Cornell University department of Electrical and Electronic Engineering, Meijo University Initial results on 0.25 urn gate MODFETs have yielded {= 21.4 GHz and 'max = 7
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