Abstracts of MRS Internet Journal of Nitride Semiconductor Research , Volume 1, Articles 39-46
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Nitride of Semiconductor Research An electronic, peer-reviewed journal published by the Materials Research Society. http://nsr.mij.mrs.org/
Volume 1, Articles 39-46
Editors-in-Chief: S. Strite, Cammy R. Abernathy [email protected] http://nsr.mij.mrs.Org/1/39/ High-Power High-Temperature Heterobipolar Transistor with Gallium Nitride Emitter J.I. Pankove1, M. Leksono1, S.S. Chang1, C. Walked, and B. Van Zeghbroeck2 University of Colorado 2 Astralux Inc. A new heterobipolar transistor was made with the wide bandgap semiconductors gallium nitride (GaN) and silicon carbide (SiC). The heterojunction allows high injection efficiency, even at elevated temperatures. A record current gain often million was obtained at room temperature, decreasing to 100 at 535°C. An Arrhenius plot of current gain vs I/Tyields an activation energy of 0.43 eV that corresponds to the valence band barrier blocking the escape of holes from the base to the emitter. This activation energy is approximately equal to the difference of energy gaps between emitter and base. This transistor can operate at high power without cooling. A power density of 30 kw/cm2 was sustained. Order No. NS001-039 61996 MRS http://nsr.mij.mrs.org/1 / 4 0 / Determination of the Dislocation Densities in GaN on o-Oriented Sapphire A. Pelzmann1, M. Mayer1, C. Kirchner1, D. Sowada1, T. Rotter1, Markus Kamp1, K.J. Ebeling1, S. Christiansen2, M. Albrecht2, HP. Strunk2, B. Hollander, a n d S. Mantis 1 UniversitatUlm 2 Universitat Erlangen-Niirnberg 3 lnst. fur Schicht-und lonentechnik We report on a comprehensive study of the defect structure in GaN grown on c-oriented sapphire by gas source molecular beam epitaxy and metal or^nic vapor phase epitaxy. Transmission electron microscopy is used to investigate the defect structures which are dominated by threading dislocations perpendicular to the sapphire surface and stacking faults. Additionally,
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dislocation densities are determined. For determination of dislocation densities by x-ray diffraction we employ a model that uses the linewidth of x-ray rocking curves for this purpose. Finally, Rutherford backscattering spectrometry is performed to complement the structural investigation. Order No. NS001-040 ©1996 MRS http://nsr.mij.mrs.org/1/41/ Metal Contacts on a-GaN T.U. Kampen and W. Monch Gerhard-Mercator-Universitaet Duisburg The Schottky barrier heights of silver and lead contacts on n-type GaN (0001) epilayers were determined from current-voltage characteristics. The zero-bias barrier heights and the ideality factors were found to be linearly correlated. Similar observations were previously reported for metal contacts on
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