Analysis and design of a novel high capacitance ratio and low actuation voltage RF MEMS switch
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TECHNICAL PAPER
Analysis and design of a novel high capacitance ratio and low actuation voltage RF MEMS switch Kun Deng1
•
Fuxing Yang1 • Zhongliang Deng2 • Xuanming Wang2 • Ke Han2
Received: 22 August 2020 / Accepted: 13 October 2020 Ó Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Analysis and design of a novel high on/off capacitance ratio and low actuation voltage radio frequency microelectromechanical systems (RF MEMS) switch. Circuit topology and electrode topology of RF MEMS switches are analyzed. In order to decrease actuation voltage, the switch, using coplanar waveguide transmission line for signal transmission, are designed with special elastic supported structures and actuation electrode are located on both sides of signal line. Metal– insulator–metal (MIM) fixed capacitors are used to change the up/down-state capacitance without adding more loss to the switches. Through the finite element method to determine the spring constant and the necessary applied voltage, the simulation voltage is 4.5 V. The RF performance are obtained by simulating results in the HFSS tool. The switch exhibits the insertion loss of – 0.2 dB, and isolation of – 20 dB within the range of 10–30 GHz, and the isolation extreme value reaches - 41 dB at resonant frequency, the return loss is less than - 12 dB at the resonant frequency. From the fitted results, the on/off capacitance ratio is 162 for the MEMS switch. Compared with traditional MEMS capacitive switches, the proposed MEMS switch exhibit high on/off capacitance ratios and low actuation voltage.
1 Introduction In such an era of scaling down semiconductor devices in micro or nanometer range, RF MEMS switch with the advantages of low or near-zero power consumption, high isolation, low insertion loss, and high linearity has obtained a rapid development (Metta et al. 2018). Compared to PIN diode or FET switches, RF MEMS switch is more
& Kun Deng [email protected] Fuxing Yang [email protected] Zhongliang Deng [email protected] Xuanming Wang [email protected] Ke Han [email protected] 1
School of Automation, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China
2
School of Electronic Engineering, Beijing University of Posts and Telecommunications, Haidian District, Beijing 100876, China
suitable for high frequency and miniaturized communication system. The traditional capacitive RF MEMS switch is electrostatically actuated, and it contains a coplanar waveguide to transmit signals, a big suspended membrane as actuator and an electrode to provide bias voltage. When a voltage bias is applied, the switch use mechanical movements to short or open a transmission. Capacitance ratio and actuation voltage are two important indexes to measure the switch performance. The former reflects the RF performance of the switch, while the latter reflects the mechanical characteristic of the switch. However, the two are often mutually limited in design. A simple and effective appro
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