Design and performance analysis of hybrid SPDT RF MEMS switch
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TECHNICAL PAPER
Design and performance analysis of hybrid SPDT RF MEMS switch K. Srinivasa Rao1
•
K. Vasantha1 • K. Girija Sravani1,2
Received: 22 February 2020 / Accepted: 6 May 2020 Ó Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract This paper presents the design and simulation of Hybrid type RF MEMS switch for satellite communication application. The Hybrid switch beam is having non-uniform meanders and holes. The gold material is used as a beam and CPW. The gap between the beam and dielectric is 3 lm. The design is based on the shunt and series configuration consisting of 2 capacitive switches and 2 Ohmic switches. The performance analysis is done by using the HFSS tool. The individual Ohmic switch having 31 dB isolation and capacitive switch having 67 dB isolation. The proposed Hybrid switch having 87 dB isolation when both switches are in the OFF state. During ON state, the switch shows the low insertion loss of - 0.18 dB and return loss of - 63 dB at 16 GHz.
1 Introduction In RF MEMS switches different types of switches are present like a Ohmic switch, Capacitive switch and hybrid switches. A variety of MEMS components such as resonators, phase shifters, RF MEMS switches, variable capacitors, oscillators, inductors etc. have been employed in 5G devices operating at millimetre wave frequencies. Among them RF MEMS switches plays a key role in devices such as reconfigurable antennas, phase shifters and filters etc. due to having the advantages of low power consumption, small size and low cost (Kumar et al. 2018). Ohmic switches are often used in series-configuration. The proposed Ohmic SPDT switch is made up of silicon substrate and CPW transmission line. The material used for beam is gold it is on the dielectric layer. The Ohmic switch is having Meanders and perforations. High isolation at the low frequency used for space and defense applications. A dielectric is laid over the signal line to combat the unnecessary loss of signal and in this way, the flow of the electric signal is curbed, only the RF signal gets & K. Srinivasa Rao [email protected] 1
MEMS Research Center, Department of ECE, Koneru Lakshmaiah Educational Foundation (Deemed to be University), Vaddeswaram, GunturAndhra Pradesh, 522502, India
2
National MEMS Design Centre, Department of ECE, National Institute of Technology (NIT), Silchar, Silchar, Assam, India
transmitted (Lakshmi Narayana et al. 2017a, b). A switch is proposed to improve high isolation by using hafnium oxide dielectric material at a frequency range of 10 GHz to 15 GHz (Yao et al. 1999). The novel SPST, SPDT switches are proposed for improving switch performance by using gold as beam material and the switch shows less insertion loss of 0.3 dB. (Jaiswal et al. 2018). RF MEMS switches possesses high performance characteristics when compared with traditional semiconductor switches like FETs and PIN diodes in many applications. The conventional switches have large leakage currents which weakens the RF
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