Design, simulation and analysis of RF MEMS capacitive shunt switches with high isolation and low pull-in-voltage
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TECHNICAL PAPER
Design, simulation and analysis of RF MEMS capacitive shunt switches with high isolation and low pull-in-voltage K. Girija Sravani1,2 • D. Prathyusha1 • Ch. Gopichand1 • Surya Manoj Maturi2 • Ameen Elsinawi3 Koushik Guha2 • K. Srinivasa Rao1
•
Received: 16 February 2019 / Accepted: 30 August 2020 Ó Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract This paper presents the design a capacitive shunt type RF-MEMS switch with high isolation, high switching speed and low actuation voltage for Ka-band applications. The proposed RF-MEMS switch has chosen different structures to reduce the actuation voltage. This paper investigates various analysis such as Electromechanical and RF characteristics of the proposed switch. The beam material taken as the gold and the dielectric is taken as Si3N4 with er as 7.5 and the pull-in voltage of proposed switch obtained as 3.37 V. The proposed different RF-MEMS switches have been analyzed over the range of 26.5–40 GHz frequency. The clamped-clamped structure type RF MEMS Switch is having high isolation as - 46.37 dB at 40 GHz. The perfection of RF losses makes these switches as a good choice for a high frequency of K-band.
1 Introduction The RF-MEMS switches are playing a leading role in MEMS technology. These switches have promising feasibility of components for communication systems due to their high isolation properties at high RF frequencies (Lakshmi Narayana et al. 2017). The reason behind the RFMEMS switches is their excellent RF performance such as very high isolation, good linearity, and near-zero power consumption at microwave frequencies range, when compared with the traditional switches such as GaAs (Gallium Arsenide), PIN (Photo-injection diode) and FETs (Field effect transistors) switches. The RF-MEMS switches, can act as capacitive in shunt or DC contact in a series configuration. The series type switches are preferred over DC contact switches as it is limited \ 10 GHz frequency (i.e.,
& K. Girija Sravani [email protected] 1
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation (Deemed To Be University), Green Fields, Vaddeswaram, Guntur 522502, India
2
National MEMS Designing Center, Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Assam, India
3
Mechanical Engineering, American University of Iraq, Sulaymaniyah, Iraq
at low-frequency applications) whereas shunt switches provides [ 10 GHz frequency (i.e., at high-frequency applications) (Lee et al. 2005). The surface micro-machining process is used in MEMS switches for thin metallic beam which consists of two fixed ends. It is used to control the electrical signals by deflections of the beam over the electrode. Different techniques are used for actuation of switches such as piezoelectric, electromagnetic, thermal and electrostatic (Pacheco et al. 2000). These actuation mechanisms are used to avoid the complexity of structures, i
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