Design and analysis of a RF MEMS shunt switch using U-shaped meanders for low actuation voltage
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TECHNICAL PAPER
Design and analysis of a RF MEMS shunt switch using U-shaped meanders for low actuation voltage G. Shanthi1,2 • K. Srinivasa Rao1
•
K. Girija Sravani1,3
Received: 2 April 2020 / Accepted: 28 April 2020 Ó Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract This paper presents the design and simulation of RF MEMS switch using uniform U-Shaped meanders. High isolation and low insertion loss are the main performance parameters enhanced by considering the inductive sections on the design and developing high capacitance using HfO2 as a dielectric medium. The inductive sections in the design help maintain the device at resonance. The proposed uniform U-shaped meanders lower the spring constant and reduce the Pull-in-voltage of the switch. The performance characteristics are observed by simulating the proposed switch in the electromechanics environment using the COMSOL FEM tool. The switch exhibits a low Pull-in-voltage of 5.2 V with a very low switching time of 23.1 ls. Total capacitance of 42.19 fF is formed during upstate which provides a low insertion loss of less than 0.1 dB. Capacitance of 19.11 pF during downstate provides high isolation of - 42.11 dB.
1 Introduction Microwave systems mostly require a single filter which operates in multiple frequency bands. This can only be possible using a tunable or reconfigurable filters (Go´mezGarcı´a and Guyette 2015). An ideal filter is a linear 2-port network that provides perfect transmission of signal for frequencies in a certain stop band region, infinite attenuation for frequencies in the stop band region, and a linear phase response in the pass band (to reduce signal distortion). Different MEMS filter designs are possible with coplanar waveguide (CPW) layout on thin membrane (Yang et al. 2012). Filters, specifically Band stop filters, can improve the radio performance by improving the signal & G. Shanthi [email protected] & K. Srinivasa Rao [email protected] 1
MEMS Research Center, Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation (Deemed to be University), Vaddeswaram, Guntur 522502, India
2
Department of Electronics and Communication Engineering, VNR Vignana Jyothi Institute of Engineering and Technology, Bachupally, Hyderabad 500090, India
3
National MEMS Design, Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Assam 788010, India
to noise ratio, avoiding any saturation due to out-of-band noise contributions (Lin and Rais-Zadeh 2016). It is easy to integrate with the rest of the system without any issues as the connectorized and connector less modules can be easily constructed. Troubleshooting is easy due to easy accessibility over the entire structure. Filters are used in any type of RF or microwave communication, radar, or test and measurement system (Bhat et al. 2018). At a frequency range of 19–17 GHz, tunable Electromagnetic band gap (EBG) filter has been made with l
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