Annealing of High Dose C Implanted Si by Pulsed Electron Beam
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ANNEALING OF HIGH DOSE C IMPLANTED Si BY PULSED ELECTRON BEAM P. DURUPT+, D. BARBIER++, A. LAUGIER++ + : Laboratoire de Physique Electronique 2 Universit6 Claude Bernard - Lyon I 43, Boulevard du 11 Novembre 1918, 69622 VILLEURBANNE CEDEX (France) ++ : Laboratoire de Physique de la Matiere (LA CNRS n' 358) Institut National des Sciences Appliquees de Lyon 20, Avenue Albert Einstein, 69621 VILLEURBANNE CEDEX (France)
ABSTRACT High dose (1-7 1017cm- 2), low energy (10-40 keV) C implanted Si samples were annealed by conventional thermal procedure and by pulsed electron beam. Characterization is performed by I.R., electron diffraction and Rutherford Backscattering. Effect of PEBA is equivalent to thermal annealing at 900°C. No C redistribution occurs and a poor recrystallization of the SiC formed during implantation is observed. INTRODUCTION Ion implantation is a powerful method to directly forms compounds. Since 1971 a lot of papers cjq/cerls SiC synthesis by high doses carbon implantation in single crystal silicon (N>_10 cm ){1-41 In the case of hot implantation, ý type (cubic form) SiC is directly synthesized when substrate temperature exceeds 600'C {5-7}. After room temperature implantation, thermal annealing is necessary to observe noticeable formation of crystallized SiC. Fast annealing by laser beam hj been mentioned, but informatioq• werl rather concise { 8 ) or concerned only C implantation at doses of 10 cm maximum { 9 }. The present study gives the comparison between thermal and pulsed electron beam annealings (PEBA) of silicon implanted with carbon ions at room temperature. EXPERIMENT Substrates were (100) and (Ill) oriffted silicon slices (thickness O.2.-p4 mom). I)hey •were implanted using 10-40 keV C ions with doses ranging from 10 to 7.10 cm , so that carbon is weakly buried with concentration comparable to silicon one. The preparation technique and carbon profiles by means of Rutherford backscattering (RBS) have been presented in detail elsewhere { 101. In this work, thermal annealing was performed at 1050°C in a vacuum ionpumped system for 40 minutes and PEBA was carried out with a SPI-300 processor. Fig.l.a) shows the I,V(t) trnsient pulses. The pulse duration was 60 nanoseconds and the fluence was 1.6 J/cm . Fig.l.b) gives the electronic spectral distribution. The mean electron energy was 23.3 keV. Fig.1.c) shows the depth-dose profile at the end of the pulse. The profile shows deep penetration so that the surface dose does not exceed 2200 J/g. The corresponding temperature rise is given on Fig.2. The computed melting depth is 0.8 micron and the liquid phase duration is 700 nanoseconds { I I1. The liquid silicon is not superheated. The computation was performed using thermal data of Si.
Mat.
Res.
Soc.
Symp.
Proc.
Vol.
23 (1984) ®Elsevier
Science Publishing Co.,
Inc.
748
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