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ABSTRACT. Experimental results obtained by rapid isothermal annealing of Si implanted semi-insulating GaAs are presented and compared with results obtained by electron-beam and conventional furnace annealing. We shall show that for high Cr-doped material the problem of redistribution cannot be avoided and that for undoped material, this technique yields very good activation (near 100%) and high mobility (approximately 2 4400 cm /V.sec). INTRODUCTION. Transient and furnace annealing of low dose ion implanted semi-insulating GaAs for MESFET applications have revealed that: a) pulsed laser and electron-beam processes ( 800 C yield an encapsulant and anneal time dependent activation (typically

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