Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon
We present a “unified” model for the simulation of boron transient enhanced diffusion in both crystalline and preamorphised structures. The model describes the thermal evolution of a supersaturation of Si interstitial atoms in dynamical equilibrium with a
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Springer-Verlag Wien GmbH
Dr. Dimitris Tsoukalas Dr. Christos Tsamis Institute of Microelectronics "Demokritos" National Center for Scientific Research Athens, Greece
This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specifically those of translation, reprinting, re-use of illustrations, broadcasting, reproduction by photocopying machines or similar means, and storage in data banks. Product Liability: The publisher can give no guarantee for all the information contained in this book. This does also refer to information about drug dosage and application thereof. In every individual case the respective user must check its accuracy by consulting other pharmaceutical literature. The use of registered names, trademarks, etc., in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. © 2001 Springer-Verlag Wien Originally published by Springer-Verlag Wien New York in 2001 Softcover reprint of the hardcover ist edition 2001 Typesetting: Camera ready by authors Printing: Druckerei Theiss GmbH, A-9400 Wolfsberg Printed on acid-free and chlorine-free bleached paper SPIN 10845347
With 474 Figures
ISBN978-3-7091-7278-0 ISBN 978-3-7091-6244-6 (eBook) DOI 10.1007/978-3-7091-6244-6
Editorial This volume contains the proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SrSPAD '01, held on September 5-7, 2001, in Athens. The conference is organized annually and takes place in tum in Europe, Japan and the USA. SISPAD '99 was organized at Kyoto Research Park, Japan, and SISPAD '00 took place in Seattle, Washington, USA. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing the basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer-Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices. The proceedings were printed from the authors camera-ready manuscripts. We would like to express our sincere appreciation to the authors for their high-quality contributions, their cooperation and efforts. Also we would like to thank the members of the conference committee for reviewing the manuscripts carefully. SISPAD ' 02 will be held on September 4-6,2002 in Kobe, Japan. Certain to continue the tradition of being the most important conference in its tield, we once again look forward to a most successful a