Binary Data Transmission Performance of Sub-20 nm Indium Antimonide Nanowires
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Binary Data Transmission Performance of Sub-20 nm Indium Antimonide Nanowires Ali Bilge Guvenc1, Miroslav Penchev1, Jiebin Zhong2, Cengiz Ozkan2,3, Mihrimah Ozkan1 1 Department of Electrical Engineering, University of California-Riverside, Riverside, CA 92521, U.S.A. 2 Department of Mechanical Engineering, University of California-Riverside, Riverside, CA 92521, U.S.A. 3 Material Science and Engineering Program, University of California-Riverside, Riverside, CA 92521, U.S.A. ABSTRACT We investigated the data transmission performance of indium antimonide (InSb) nanowires (NWs) synthesized on InSb (100) substrate using chemical vapor deposition (CVD) having diameters of 20 nm and below. The results indicate that the data transmission performance of NWs suffer from low mobility values on the order of 10-to-15 cm2V-1s-1 because of the scattering due to their small diameters, crystal defects and oxidation occurs during growth and cooling. The 20 nm NWs can sustain data rates up to 5 mega bits per second (Mbps) without any impedance matching and de-embedding of the parasitic parameters coming from the measurement system with a bit error rate (BER) level of 10-8. The data rate is directly proportional to the diameter of the NWs. INTRODUCTION The dimensions of integrated circuits (IC) steadily decrease due to the shrinking of device dimensions. There are challenges such as the fabrication issues at this scale and the quantum effects. Besides those ones, another challenge to be overcome for future electronics is the scaling-down of interconnects in ICs. The interconnect is the wiring in an IC that passes the clock and data signals and provides power to parts of the ICs.1 The currently used material for interconnects is copper (Cu). At this nano-scale, Cu interconnects face problems due to its inability to carry high current density, high resistivity2 and mechanical instability.3 Indium antimonide (InSb) nanowires (NWs) might be a good material candidate for addressing these issues. InSb is a well known semiconductor used in electronic and long wavelength optoelectronic devices because of its unique properties.4-6 Its high bulk electron mobility at room temperature (~78,000 cm2V−1s−1)7 and ballistic length (up to 0.7 μm) make InSb the ideal candidate for high-speed electronic devices. On the other hand, resistivity of InSb NWs having diameter of 50 nm and below show weak temperature dependence which makes them appropriate for constant resistance nano-devices.4 Previous studies on the InSb NWs have mostly focused on the electrical transport properties4 and growth processes8 of the NWs. In this work, we propose InSb NWs as a candidate material for future high-speed digital data transmission applications for nano-devices and report on the basic electrical transport characterization, high-speed digital data transmission performance measurements and the analysis of InSb NWs by using the eye diagram9, 10 of the transmission line.
EXPERIMENT The devices used in the measurements were fabricated from Chemical Vapor Deposition (CVD)
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