Charging and Aging Effects in Porous ULK Dielectrics
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0990-B06-03
Charging and Aging Effects in Porous ULK Dielectrics Cyril Guedj1, Eugenie Martinez1, and Gregory Imbert2 1 CEA-LETI, Minatec, 17, Rue des Martyrs, Grenoble, 38540, France 2 STMicroelectronics, 850, Rue Jean Monnet, Crolles, 38926, France
ABSTRACT The down-scaling of CMOS interconnects increases dielectric reliability challenges. Porous ULK materials used in advanced interconnects may suffer from charge trapping and detrimental aging during bias-thermal stress experiments. We demonstrate that a threshold between charging and aging domains may occur for an injected electrical energy of 0.1 MJ/cm3 at 250∫C after interconnect integration. Electron injection in the dielectric is likely to induce proton formation and motion. For more damaging stress currents, in-situ Auger experiments demonstrate that the degradation is mostly due to modifications around carbon bonds. INTRODUCTION Future generations of integrated circuits require ultra-low-k (ULK) materials to increase device speed, reduce power and heat dissipation, and reduce interline cross talk. In terms of reliability, the evolution from SiO2 to porous SiCOH insulators with lower dielectric constant (k
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