PECVD Versus Spin-on to Perform Porous ULK for Advanced Interconnects: Chemical Composition, Porosity and Mechanical Beh
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0914-F04-06
PECVD Versus Spin-on to Perform Porous ULK for Advanced Interconnects: Chemical Composition, Porosity and Mechanical Behavior Vincent Jousseaume1, Charles Le Cornec1, Frederic Ciaramella1, Laurent Favennec2, Aziz Zenasni1, Gurvan Simon1, Jean Paul Simon3, Guillaume Gerbaud4, and Gerard Passemard2 1 CEA-LETI, 17 rue des Martyrs, Grenoble, 38054, France 2 STMicroelectronics, 850 rue Jean Monnet, Crolles, 38920, France 3 CNRS-LTPCM, 1130 rue de la Piscine, Saint Martin d'Heres, 38402, France 4 CEA-DRFMC, 17 rue des Martyrs, Grenoble, 38054, France ABSTRACT Porosity introduction in a-SiOCH matrix is a main research field in microelectronic. Two techniques are used to deposit these dielectric thin films: spin-on or Plasma Enhanced Chemical Vapor Deposition (PECVD). In this work, different porous a-SiOCH thin films (k close to 2.2 – 2.3) are studied. Several synthesis ways are used to deposit these a-SiOCH layers: by porogen approach, self assembling or nanoclustering techniques for spin-on, and using a porogen approach for PECVD. Impact of deposition process and curing on material crosslinking are investigated. The skeleton structure is correlated to the elastic properties whatever the deposition technique used. Finally, porosity and pore interconnectivity are studied and the results show that barrier diffusion is less pronounced in case of small pores size such as those obtained by PECVD.
INTRODUCTION A new challenge for semiconductor industry is to reach the low permittivity (k
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