Continuous Amorphous Silicon Depositions Over Large and Very Large (> IM 2 ) Areas
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CONTINUOUS AMORPHOUS SILICON DEPOSITIONS OVER LARGE 2 AND VERY LARGE (> im ) AREAS A. MADAN, S. KUHL AND B. VON ROEDERN 12441 West 49th Avenue, Glasstech Solar, Inc., (GSI), 80033, U.S.A.
Colorado
Wheatridge,
ABSTRACT We present data of materials and devices produced from GSI's continuous mass
production
system for
development
recent
large
area
solar
cells.
We
system which is
of a multichamber
also
discuss our
capable
of producing
2
uniform a-Si:H layers over areas of 2 m .
Introduction It
is
well known that the growth mechanisms of a-Si:H films depends on
a multitude
of interlinked effects related to deposition;
that any PECVD system for thin film depositions versatility
in
aspects
an
of
reactors 6'
(120
1987,
its basic design. integrated
In
system
it
is
then clear
should incorporate
maximum
the following we shall describe
design
from
ultra-high
vacuum
some
research
to very large systems capable of depositing a-Si:H layers on 4' cms X 180 cms)
Madan et al.,
size substrates
(Madan,
1987,
X
von Roedern and Madan,
1987).
GSI's Ultra High Vacuum Multichamber Research Systems It
is
known
direct,
if
of
a-Si:H
the
substrate, plasma,
(c)
(f)
substrate,
the
material; flow
following (a)
rate,
excitation (i)
There devices
that
deposition
parameters
distance,
(b)
temperature
of
pressure,
(e)
confinement
of
discharge power,
(h)
frequency,
(g)
are
other solar
factors cells)
which
are
of
electrons
and
also
to be
holes
increasing decreases
the
have
rapidly
to
a
low
value
where
Numerous
studies have
the i-layers decreases
A is
level of
a bearing when multilayers
fabricated.
B or P in
oxygen contamination
voltage bias of
etc.
recombination lifetime of the free carriers.
the
mobility
and
r
the Ar is
the
There are many reports that by (0.3%)
5.10-10
the
cm2/V
pr product of holes (Delahoy
& Griffith,
These considerations then naturally imply that the deposition system
should incorporate certainly
for
ultra-high vacuum
device
work,
the
( : 10-9 torr)
system
should
pumping capability
have
multi-chambers.
example of such a multichamber with a load lock system is and
a
deposition
pre deposition pressure,
(e.g.
products
GSI
have
anode-cathode (d)
shown that even 1 ppm of residual
1981).
system
not totally understood, bearing on the opto-electronic properties
is
now being
used by many
Mat. Res. Soc. Symp. Proc. Vol. 118. '1988 Materials Research Society
prestigious
and An
manufactured by
laboratories
around
the
588
world.
In no
hence
valves.
gate
achieving
With
(a)
in
pressure through
contamination
can
baking,
these
range.
The
discussed
(h)
systems
systems above
2
100 cm
high quality
substrate
area.
opto-electronic
are
are
the
give
to
of
capable
provided the
with
maximum shield
A plasma confinement
incorporated which promotes excellent uniformity
± 5% over
via
arise
separated via the load lock as well as
is
materials and device r
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