E-MRS Spring Meeting in June to Focus on Electronic Materials
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E-MRS Spring Meeting in June to Focus on Electronic Materials According to the general goals of the European Materials Research Society (EMRS), the traditional Spring Meeting will be held in Strasbourg June 16-19, 1998 with special emphasis on "Electronic Materials." Under the auspices of the Conference Chairs P. Glasow (Germany) and Y.I. Nissim (France), 14 Symposia are planned ranging from fundamental aspects of defects in silicon to materials aspects in microsystem technologies. Forty-five scientists worldwide will serve as symposium organizers, indicating an international character of the meeting. The symposium "Defects in Silicon: Hydrogen," organized by J. Weber and A. Mesli, is devoted to the fundamental aspects of defects in crystalline silicon and their influence on silicon technology. The forum will stimulate interactions among researchers and technologists. It addresses particularly the recent developments in understanding the properties of hydrogen and its interaction with other defects. F. Priolo, J. Linnros, and L. Canham organized the Symposium "Light Emission from Silicon: Progress Toward Si-Based Optoelectronics." Light emission from silicon is a rapidly expanding field attracting materials researchers worldwide. Silicon is the dominating material in microelectronics, partly due to its unrivaled properties, but also as a result of the enormous research and development invested in silicon technology. Since waveguides, modulators, and detectors have already been demonstrated in Si, one of the major limiting step toward silicon-based optoelectronics is the achievement of efficient, stable, very large scale integration (VLSI) compatible light sources. Recently, encouraging results have been obtained in several fields comprising porous silicon, silicon-rich silicon dioxide, nanoparticles, multilayers, rare-earth-doped silicon, and iron disilicide. This forum will elicit discussion among researchers working on various approaches to obtain light from silicon or from silicon-compatible materials, and will therefore provide an opportunity to compare different technologies, their different mechanisms for light emission, and prospective application areas. Basic materials aspects in terms of preparation, materials properties, and theory as well as device fabrication and performances will be discussed. The Symposium "Growth, Characterization and Applications of Bulk II-VI's," organized by R. Triboulet, G. MullerVogt, and P. Capper, is to bring together crystal growers, chemists, physicists, and materials scientists to discuss problems
dealing with the growth, physics, and applications of II-VI's, the understanding of which is the key to any industrial application of II-VI materials, especially CdTe, ZnSe, and ZnO. E. Kasper and K.L. Wang organized the Symposium "Thin Films Epitaxial Growth and Nanostructures." Nanometer structures attract high scientific and technological attention by tailoring material properties artificially. Epitaxial growth is a promising way to produce low dimensional structures with nano
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