Effect of fast annealing on the electrical properties of SiO 2 /Si structures with thin layers of anodic silicon oxide
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Effect of Fast Annealing on the Electrical Properties of SiO2/Si Structures with Thin Layers of Anodic Silicon Oxide I. L. Baranov, L. V. Tabulina^, L. S. Stanovaya, and T. G. Rusalskaya Belarussian State University for Informatics and Radio Electronics, Minsk, 220013 Belarus ^e-mail: [email protected] Received October 3, 2005; accepted for publication October 17, 2005
Abstract—Effects of fast annealing on the properties of SiO2/Si structures with thin, ~10 nm, layers of anodic silicon oxide formed on single-crystal Si substrates are studied in relation to the semiconducting properties of the silicon support and to the duration, temperature, and environment of thermal treatment. The optimal duration of high-temperature annealing of structures in an inert atmosphere for their application in the technology of nanosize MOS integrated circuits is determined. PACS numbers: 73.40.Qv, 81.65.Mq, 85.30.Tv DOI: 10.1134/S1063782606080100
1. INTRODUCTION Promising tendencies in modern microelectronics, which is now becoming nanoelectronics, demand further improvement of the technology employed [1–3]. In the manufacturing of integrated circuits (IC), singlecrystal silicon remains the basic material for substrates. One of the principal processes of fabrication of Sibased IC is the formation of 〈metal〉–〈silicon oxide〉– 〈semiconductor Si〉 structures (transistor MOS structures) [4]. Their dimensions have reached a level of 0.1 µm, which complicates the application of standard microelectronic technologies. This is especially important for the formation of thin SiO2 subgate layers, whose thickness is reduced to 5–15 nm [5]. Bringing the manufacture of MOS transistors with such films to a commercial level will be a tremendous step forward in IC technology. A definite achievement in this area is the development of a technique for the electrochemical formation of thin SiO2 films of 10–15 nm in thickness, reported in [6]. The main advantages of this method are the possibility of oxidation at room temperature and the precise localization of the impact. A treatment of this kind was proposed in [7] as a method to improve the insulator characteristics of thin subgate thermal SiO2 films in SiO2/Si structures; the authors note that the improvement of the quality of these films is not associated with their thickening. However, in spite of its evident advantages over the conventional high-temperature processes of fabrication of thin SiO2 films in diffusion furnaces, the electrochemical technology is not used as yet in IC manufacturing. One of the reasons is the lack of data concerning the effect of short high-temperature treatment on the electrical characteristics of SiO2/Si structures with thin layers of anodic silicon oxide, because similar effects can arise during the operation of MOS structures in IC. Further, the use of
anodic oxide films in nanoelectronics is hindered by the initial state of their structure. In particular, silanol groups [SiOH or Si(OH)2] are present on their outer
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