Electrical characterisation of Ag/poly(3-hexylthiophene)/silicon nanowires Schottky diode
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Electrical characterisation of Ag/poly(3-hexylthiophene)/silicon nanowires Schottky diode M. Rahmani1,2 · A. Meftah1 Received: 3 April 2020 / Accepted: 5 August 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract The electrical properties of Ag/Poly(3-hexylthiophene)/Silicon nanowires heterostructure (Ag/P3HT/SiNWs) were investigated. Silicon nanowires (SiNWs) were obtained by metal-assisted chemical etching method in one-step process. P3HT polymer was deposited on SiNWs surfaces by electroless deposition method for different immersion durations (dim). The morphology of SiNWs before and after deposition of P3HT polymer has been examined by scanning electron microscope (SEM). The formation of nanowires as well as the presence of P3HT on their surfaces can be seen in SEM images. Current–voltage (I–V) measurements were carried out on Ag/P3HT/SiNWs by varying dim from 30 to 210 min. The electrical measurements on the different junctions at room temperature showed a rectifying effect. For 30 min, the ideality factor of the Schottky diode was reduced from 4 to 1,4. By using the Cheung method, the diode parameters of the different structures are determined and discussed. The different hetrostructures have been annealed at 100 °C, 200 and 300 °C. The characteristic parameters were calculated as a function of annealing temperature. The optimum temperature for these heterostructures characteristics is 100 °C. The interface states, the trapping levels and the thermal activation of the free carriers are the main factors involved in the conduction phenomenon through Ag/P3HT/SiNWs heterostructures.
1 Introduction For many decades, semiconductor (SC) electronics have drawn considerable interest thanks to its large impact in information technology and modern electronics [1–3]. Silicon nanowires (SiNWs) show an excellent light-trapping characteristic and high carriers mobility. Thanks to its large specific surface, SiNWs can easily react with several chemical elements [4]. The recombination of charge carriers in Si substrate is largely suppressed compared to one-dimensional structure due to the large junction area and short diffusion length in the radial structure [5]. Despite the interesting structural and electronic properties of silicon nanowires, works related to Schottky diodes based on SiNWs are seldom reported. For developing integrated nanoscale * M. Rahmani [email protected] 1
Unité de nanomatériaux et photonique, Département de Physique, Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 El Manar, Tunis, Tunisia
Institut supérieur d’informatique et de gestion de Kairouan, Université de Kairouan, Avenue Khemais El Alouini, 3100 Kairouan, Tunisia
2
electronics, Koo et al. [6] have fabricated silicon nanowire field-effect transistors (SiNWFETs) with a highly simplified integration scheme. They found Schottky barrier transistors with excellent enhancement-mode characteristics and a high on/off current ratio. In other hand, organic semiconducting materials are
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