Illumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schottky diode
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Illumination impact on the electrical characteristics of Au/Sunset Yellow/n‑Si/Au hybrid Schottky diode A. G. Imer1 · E. Kaya1 · A. Dere2 · A. G. Al‑Sehemi3,4,5 · A. A. Al‑Ghamdi6 · A. Karabulut7 · F. Yakuphanoglu2,6,8 Received: 30 April 2020 / Accepted: 16 July 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract In this study, semiconductor device applications of organic material sunset yellow (SY) ( C16H10N2Na2O7S2) has been investigated. The SY thin film was grown on n-Si via spin coating method and the Au/SY/n-Si/Au heterojunction was fabricated. The basic diode parameters of device were determined by the current–voltage (I–V) and capacitance–voltage (C–V) measurements at the room temperature. The values of the ideality factory (n) and barrier height (Φb) were evaluated as 1.15 and 0.70 eV, respectively; and series resistance (Rs) of device was found using Norde functions. The values of built in potential, donor concentration, Fermi energy level and barrier height were also estimated from the linear C−2–V curves with reverse bias room temperature and difference frequency. Furthermore, I–V measurements were applied under different illuminations; some photoelectrical parameters of device were evaluated to understand the photo response properties of the device. Consequently, the results confirmed that the barrier height can be modified by interfacial SY layer, and the device can be used in optoelectronic applications such as optical sensor or photodiode.
1 Introduction Since 1970s, metal-interfacial layer-semiconductor (MIS) hybrid structures with an organic molecule have attracted great attention due to their crucial role in the fabrication of various optoelectronical devices [1–4]. Many kinds of organic materials have been used as an interfacial layer to * A. Karabulut [email protected] 1
Department of Physics, Faculty of Science, Van Yuzuncu Yil University, 65080 Van, Turkey
2
Nanoscience and Nanotechnology Laboratory, Firat University, Elazig, Turkey
3
Department of Chemistry, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia
4
Research Center for Advanced Materials Science, King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia
5
Unit of Science and Technology, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia
6
Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
7
Department of Basic Sciences, Faculty of Sciences, Erzurum Technical University, Erzurum, Turkey
8
Physics Department, Faculty of Science, Firat University, Elazig, Turkey
construction of useful devices including Schottky diodes, photodiodes, optical sensors, solar cells and organic light emitting diodes [1–5]. The modification of the electrical parameters of metal-inorganic semiconductor (MS) devices can be carried out using an organic interface layer with a high dielectric constant, so that the contact resistance, interface states and saturation current can be adj
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