Evaluation of Adhesion Between UV-cured SiOC Film and Si Substrate by Nanoindentation Method
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1116-I09-02
Evaluation of Adhesion Between UV-cured SiOC Film and Si Substrate by Nanoindentation Method M. Takeda1, N. Matoba1, M. Oishi1 and M. Sakai2 1 Toray Research Center Inc., 3-3-7, Sonoyama, Otsu, Shiga, Japan 2 Toyohashi University of Technology, Tempakucho, Toyohashi, Aichi, Japan ABSTRACT It is important to quantitatively measure the adhesion strength at the interface in a small area of electronics devices to ensure their reliability. In this study, a simple technique for measuring the adhesion using the nanoindentation method by considering the energy balance during the indentation process was proposed and applied to measure the adhesion of three kinds of UV-cured SiOC films with a thickness of 500 nm on a Si substrate. The discontinuous points of approximately 300 nm in depth appeared in all the indentation curves with a high reproducibility, and it was confirmed that these points reflect the occurrence of an interfacial delamination. The total dissipated energies calculated from the load vs. indentation depth curves indicate a good correlation with the indentation load. The delamination energies can be estimated using this relationship. The energy release rates at the interface of the UV-cured SiOC films calculated from the energy balance increases with the increasing UV curing time. From these result, we can confirm the technique proposed in this study is quite useful to simply and quantitatively measure the adhesion, especially against a thin film or the small area, even if the film is ductile. INTRODUCTION Many interfaces consisting of different thin films have recently become common in a small area of electronics devices. It is important to quantitatively measure the adhesion strength at the interface to ensure their reliability. Many methods, such as indentation [1-4], peel and pull [5], four-point bending [6], scratch [7], the modified edge lift test (MELT) [8], etc., are used for testing thin film adhesion. The nanoindentation method is normally used for measuring the mechanical properties of thin films in a small area such as young’s modulus and hardness [9]. This method is extremely convenient because no special sample preparations are required. Moreover, this method is also useful for analyzing the thin film fracture behavior because sufficient elastic strain energy was developed in the film surrounding the contact zone during indentation. The stored elastic strain can initiate and extent the interfacial cracks. Some analytical models for indentation [1, 3, 4, 10] or analytical process from the energy balance during indentation [11, 12, 13] are proposed to calculate the interfacial adhesion energy of thin films. Some researchers investigated the delamination area using an optical microscope or an atomic force microscope (AFM) to calculate the adhesion energy [3, 14]. The purpose of this study is to propose the technique for evaluating adhesion of thin films by analyzing the energy balance during indentation process and confirm the effectiveness of this method by applying to the UV-cured SiO
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