Eighth Oxford Conference on Microscopy of Semiconducting Materials Set for 1993
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Eighth Oxford Conference on Microscopy of Semiconducting Materials Set for 1993 Abstracts Being Accepted The eighth biennial conference on Microscopy of Semiconducting Materials, to be held on April 5-8, 1993 at Oxford University, will focus on advances in transmission and scanning electron microscopy of the structural and electrical properties of semiconductors. Developments in the use of other micro-characterization techniques such as x-ray topography, scanning tunneling microscopy, atom probe microanalysis and ion backscattering spectrometry will also be featured. The conference will cover a wide range of elemental and compound semiconductors. Subject areas include the characterization of as-grown semiconductors in both bulk and thin film forms, the study of lattice defect and impurity behavior and the investigation of the effects of semiconductor processing treatments. Special conference sessions will concentrate on recent advances in high resolution electron mi-
croscopy work, the nature of epitaxial layers, quantum wells and superlattices, the properties of dislocations, the characteristics of metal-semiconductor contacts and silicides, the effects of device processing treatments and the exploitation of advanced scanning techniques (SEM-CL, SEM-EBIC, STM, AFM, etc.). The provisional list of invited speakers includes J.L. Batstone (IBM, Yorktown Heights), "In-situ TEM Studies of the Crystallization of Amorphous Si: the Role of Silicides"; D. Bimberg (Technical University of Berlin), "Cathodoluminescence Imaging of Quantum Wells and Wires"; J. Brown (Sematech, Austin), "Microscopy of ULSI Structures"; F. Glas (CNET, Bagneux), "Composition Modulations and Clustering in III-V Alloys"; M.A.G. Halliwell (Philips, Almelo), "The Role of XRD in the Characterization of Semiconductor Heteroepitaxial Structures"; C.J. Humphreys (University of Cambridge), "Electron Microscope Investigations of Heteroepitaxial Materials"; A.G. Norman (Imperial College, London), "Nature and Origin of Atomic Ordering in III-V Alloys"; A. Ourmazd (AT&T Bell Labs, Holmdel) "Quanti-
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tative HRTEM of Semiconductors"; J.B. Pethica (University of Oxford), "STM of Semiconductor Surfaces"; J.M. Poate (AT&T Bell Labs, Murray Hill), "Defect Engineering in Semiconductors"; K. Sumino (Tohoku University, Sendai), "Dislocation Dynamics in Semiconductors." The conference proceedings will be published and
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