Improvement of Electrical Characteristics of SiGe Source Based Tunnel FET Device
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ORIGINAL PAPER
Improvement of Electrical Characteristics of SiGe Source Based Tunnel FET Device Irfan Ahmad Pindoo 1 & Sanjeet Kumar Sinha 1 & Sweta Chander 1 Received: 9 June 2020 / Accepted: 26 August 2020 # Springer Nature B.V. 2020
Abstract Tunnel Field Effect Transistor (TFET) is one of the most promising alternative device for semiconductor technology and shows better performance as compared to the conventional MOS device in terms of subthreshold swing, OFF current, etc. In this paper, SiGe source-based Heterojunction Tunnel FET has been investigated to enhance the performance of the device in terms of ON current and ION/IOFF ratio. The use of spacers has also been studied for enhancing the drain current. The combination of low-k (SiO2) and a high-k (HfO2) hetero dielectric material have been studied for the use of gate dielectric material as well as at the buried oxide layer. The proposed device offers an ON current of 0.537 mA/μm and an OFF current of 14.4 fA/μm, with an excellent ION/IOFF ratio of 3.72 × 1010. The average subthreshold swing of 28.57 mV/decade has also been achieved, which makes the device steeper. The ambipolar currents have been suppressed and hence the electrical characteristics of the proposed device are improved. The validity of the proposed device has been done by using TCAD simulation tool. Keywords TFET . Heterojunction . Subthreshold swing . Dielectric . High-k
1 Introduction With continuous advancements in complementary metaloxide-semiconductor (CMOS) technology, the device dimensions have reached a nanometer scale. This miniaturization has been made possible with the scaling of the device parameters as per Dennard’s rule of scaling. Aggressive scaling has been done in the past fifty years so as to increase the density of a chip. However, it also brings short channel effects like a drain induced barrier lowering,leakage current, subthreshold slope conduction, etc. into a picture. Thus, it becomes difficult to switch from OFF state to ON state while maintaining smaller supply voltages. This has been mainly attributed to the physical limitation of a metal oxide semiconductor fieldeffect transistor (MOSFET). The current transport mechanism in a MOSFET is based on the thermal injection of electrons. The ideal achievable value for a subthreshold swing is 60 mV/ decade, although practical values may degrade further.
* Sanjeet Kumar Sinha [email protected] 1
School of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, Punjab, India
Therefore, researchers have explored other novel devices to overcome these limitations [1–4]. Tunnel Field Effect Transistors (TFETs) have been presented by researchers as a potential device that can replace MOSFETs in future. TFET operation is based ontheband to band tunneling phenomenon, rather than the thermal generation of electrons. So, it becomes possible to achieve a steeper subthreshold swing, thus removing the limitation of a conventional MOSFET [5–7]. However, simple silicon-based p-i-n gated TFET structures
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