Low Leakage Current Patterned Polymeric Transistors with PAG Assisted Cross-linking PVP as Gate Dielectric and Passivati
- PDF / 1,126,784 Bytes
- 7 Pages / 612 x 792 pts (letter) Page_size
- 55 Downloads / 163 Views
1091-AA07-92
Low Leakage Current Patterned Polymeric Transistors with PAG Assisted Cross-linking PVP as Gate Dielectric and Passivation Layers Cheng-Chin Liu1, Kuo-Jui Chang1, Feng-Yu Yang2, Ta-Chuan Liao1, and Huang-Chung Cheng1 1
Electronics Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road Hsinchu, Hsinchu, 30050, Taiwan 2
Materials and Chemical Research Laboratories, Industrial Technology Research Institute, 195 Chung-Hsing Road.Sec.4 Chu Tung, Hsinchu, 31050, Taiwan ABSTRACT We have successfully proposed a patterned P3HT thin-film transistor with cross-linked PVP as a passivation material which was cured at low temperature. The active P3HT layer was isolated via photolithographic technique and O2 plasma RIE etching process. In this method, the leakage current could be reduced effectively compared with that of non-patterned device. Although the mobility was degraded 40 %, but the on/off ratio was significantly improved by over three orders and also the subthreshold swing was compatible with the amorphous Si-TFTs (~1.5 V/decade). Moreover, we also employed this low temperature curing PVP (120 0C) films as the gate dielectrics which exhibited excellent insulating property with high on/off ratio 1.58×104 and good subthreshold swing 1.66 V/decade. INTRODUCTION Organic semiconductors, as we know, have huge potential to create some revolutionary products and applications in our daily life. However, due to their poor performance, organic devices could not compete with inorganic ones until new structures and materials were adopted in resent years. Light-emitting diodes [1.2], solar cells [3], and thin film transistors [4-6] using organic semiconductor have been reported and there are also many new organic-electronics products in the market. Nowadays, organic electronics is not only the research in the labs but also in use in our life. Inorganic semiconductors such as silicon, germanium and gallium arsenide have been used for centuries. However, the electronic devices based on these materials usually need complex processing steps by costly production facilities. In recent years, organic thin film transistors (OFETs) have attracted much attention because most organic semiconductor materials can be easily deposited by spin coating at room temperature with low costs. Because of this unique kind of processing characteristics, they can be quite suitable for novel thin-film transistor applications or disposable electronics on flexible substrates requiring large area coverage, structural flexibility and low temperature processing. It has been proved to be used for some low
end electronics such as chemical vapor sensors, smart card, and radio-frequency identification (RFID) tags. Additionally, prototypes of all-polymer integrated circuits have also been demonstrated. EXPERIMENTAL DETAILS We all know that the performance of mobility is superiorly limited by the active-layer material so that the two major issues of structural OFETs is to enhance the on/off ratio & switching speeds. Therefore, we need to fabricat
Data Loading...
