Non-substituted fused bis-tetracene based thin-film transistor with self-assembled monolayer hybrid dielectrics
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RESEARCH ARTICLE
Non-substituted fused bis-tetracene based thin-film transistor with self-assembled monolayer hybrid dielectrics Baolin ZHAO (✉)1, Mikhail FEOFANOV2, Dominik LUNGERICH2,3, Hyoungwon PARK1, Tobias REJEK1, Judith WITTMANN1, Marco SARCLETTI1, Konstantin AMSHAROV2, and Marcus HALIK (✉)1 1 Organic Materials and Devices, Institute of Polymer Materials, Department of Materials Science, Friedrich-Alexander-Universität Erlangen-Nürnberg, IZNF Building, Cauerstraße 3, 91058 Erlangen, Germany 2 Chair of Organic Chemistry II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Nikolaus-Fiebiger-Str. 10, 91058 Erlangen, Germany 3 Molecular Technology Innovation Presidential Endowed Chair, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku 113-0033, Tokyo, Japan
© Higher Education Press 2020
ABSTRACT: Polycyclic aromatic hydrocarbons with zigzag peripheries are high perspective candidates for organic electronics. However, large fused acenes are still poorly studied due to the tedious synthesis. Herein we report a non-substituted fused bistetracene DBATT (2.3,8.9-dibenzanthanthrene) as the semiconductor on low-voltagedriven organic thin-film transistors. The systematic studies of thin-film growth on various self-assembled monolayer (SAM) modified gate dielectrics and the electrical performances were carried out. The sub-monolayer of the semiconductor film shows larger island domains on the alkyl chain SAM. This device exhibits the hole mobility of 0.011 cm2$V-1$s-1 with a current ratio of Ion/Ioff above 105. KEYWORDS: fused bis-tetracene; organic field-effect transistor; contact resistance; selfassembled monolayer
Contents 1 Introduction 2 Experimental 2.1 Preparation of devices 2.2 Electrical characterization 2.3 Surface and thin film growth evaluation 3 Results and discussion 3.1 The growth and morphology of DBATT 3.2 Electrical performances 3.3 Contact resistance 4 Conclusions
Received May 28, 2020; accepted July 14, 2020 E-mails: [email protected] (B.Z.), [email protected] (M.H.)
Disclosure of potential conflicts of interests Acknowledgements References Supplementary information
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Introduction
Polycyclic aromatic hydrocarbons, especially the linear acene family, have been widely investigated and exhibit promising applications in organic field-effect transistors (OFETs) [1–4]. After an intensive effort, pentacene is considered as one of the leading materials, which displays the mobility comparable to amorphous silicon transistors (3 cm2$V–1$s–1) [2]. However, the further improvements of
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Front. Mater. Sci.
the charge carrier mobility become challenges due to the reduced stability to light and oxygen [5–7]. Large angularly fused acenes with two-dimensional (2D) stripes of graphene shape become potential semiconductors owing to not only the extended π-conjugation system but also the increased aromatic sextets to enhance the stability. State of the art, the majority of synthetic works on angularly fused bis-acenes are oriented on substituted analogues [8–10] and thiophene fused heterobistetracenes [11], which
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