Optical Emission Spectroscopy Diagnostics of HMDSO/O2 Magnetized Plasma
Based on general plasma enhanced chemical vapor deposition (PECVD), a novel plasma set-up equipped with horizontal electronic field and perpendicular magnetic field is built in this study for a purpose of obtaining a high density plasma source. In order t
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Abstract Based on general plasma enhanced chemical vapor deposition (PECVD), a novel plasma set-up equipped with horizontal electronic field and perpendicular magnetic field is built in this study for a purpose of obtaining a high density plasma source. In order to characterize plasma parameters, optical emission spectroscopy (OES) was used to diagnose the electron temperature and electron density in plasma. The electron temperature calculated through Stark broadening function is in the range of 1.0–5.0 eV while the electron density is in the range of 5.0–10.0 1015 cm−3. The electron density is three orders of magnitude higher than that in normal plasma. OES results also indicate that oxygen concentration pays an essential role both on the dissociation of Hexamethyldisiloxane (HMDSO) molecule for Si precursor and on oxidation reactions of fragments, which supplies the theoretical research of plasma chemical reaction mechanism. Keywords OES
Plasma parameters Magnetically enhanced plasma source
1 Introduction Due to excellent performances, such as chemical stability, excellent barrier diffusion against water vapor or gases, and good transparent, silicon oxide coating attracts a great interest in organic electronics and food packaging surfaces [1–3]. Z. Bian Jiangsu Chunshentang Pharmaceutical Co., Ltd, Jiangsu, China X. Wang Y. Sun (&) Beijing Laboratory of Food Quality and Safety, Faculty of Food Science and Engineering, Beijing University of Agriculture, Beijing, China e-mail: [email protected] Q. Chen (&) Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing, China e-mail: [email protected] © Springer Nature Singapore Pte Ltd. 2017 P. Zhao et al. (eds.), Advanced Graphic Communications and Media Technologies, Lecture Notes in Electrical Engineering 417, DOI 10.1007/978-981-10-3530-2_137
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Comparing to many manufacturing methods of silicon oxide (SiOx) coating, PECVD exhibiting lots of advantages such as good adhesion, homogenous, pin hole free and convenience to mediate structural component [2, 4] becomes much popular method. However, the deposition rate for this technology is so low (less than 30 nm/min in practical [5]) that the application of silicon oxide products in industrial scale is seriously hampered. Recently, the addition of magnetron field to the plasma discharge area was developed to increase ionized species density and thus to enhance the deposition rate [6]. In our previous study [7], the magnetic field confined plasma source was built where the magnetic field in electrode configuration generated the electron Hall current in an endless loop and thus decreases the diffusion rate of ions, electron, and charged species. Similarly, Rank et al. [6] has observed that addition of a magnetic field could not only enhance the properties of capacitive coupling RF discharge sources but also improve the pretreatment speed rate of plastic webs. So, it can be deduced that the power efficiency could be highly improved by magnetized plasma. Esse
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