Planar Non-Volatile Memory based on Metal Nanoparticles
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Planar Non-Volatile Memory based on Metal Nanoparticles A. Kiazadeh1, H. L. Gomes1, A. R. Da Costa2, P. Rocha2, Q. Chen2, J. A. Moreira2, D. M. De Leeuw3 and S. C. J. Meskers 4 1 Center of Electronics Optoelectronics and Telecommunications (CEOT) 2 Centro de Investigação em Química do Algarve Universidade do Algarve, Campus de Gambelas, 8000-139 Faro, Portugal, 3 Philips Research Laboratories, High Tech Campus 4 WAG 11, 5656 AE Eindhoven, The Netherlands 4 Molecular Materials and Nanosystems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands ABSTRACT Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament. INTRODUCTION Metal-Insulator-Metal (MIM) structures where the insulator layer is comprised of metal nanoparticles (Nps) or nanostructured metal films embedded in semiconductive or semiinsulating host matrices have attracted considerable attention due to their interesting electrical properties and because of their potential for high density non-volatile memory applications. These devices show dramatic changes of the electrical resistance, so-called resistive switching effect. Current-voltage characteristics switch reversibly between a low conductance off-state and a high conductance on-state [1-7]. This phenomenon has being intensively investigated worldwide for developing Resistive Random Access Memories (RRAMs), a possible competitor, and even replacement for flash memory and hard-disk drives. It is relatively easy to produce colloidal solutions a well-defined contribution of nanoparticles and polymers, and it is the advantage of nanoparticles based systems. Thin films can be deposited by spin-coating, printing, or dip-coating techniques offering the prospect of low fabrication cost, mechanical flexibility and light weight. In spite of intense efforts, the detailed physics of the resistive switching is still not elucidated. The majority of the work reported in literature, is for sandwich type structures where one of the electrodes is often a reactive metal such as aluminum [8]. This makes difficult to discriminate interfacial effects occurring at the electrode/material interface from bulk process. In this contribution, we fabricate a planar structure using interdigitated gold electrodes. The resistive switching channel is comprised of silver nanoparticles embedded into an insulating polymer matrix. This planar structure is much simpler than sandwich structures and may contribute to elucidate the detailed physics of the resistive switching phenomena. Furthermore, planar structures have a significant lower intrins
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