Pre-Patterned CVD Graphene: Insights on ALD deposition parameters and their influence on Al 2 O 3 and graphene layers
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Pre-Patterned CVD Graphene: Insights on ALD deposition parameters and their influence on Al2O3 and graphene layers Gabriela B. Barin1, 2, Antonio G. Souza Filho3, Ledjane S. Barreto2, Jing Kong1 1 Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, 77 Mass Avenue, Cambridge, MA 02139, United States 2 Programa de Pós-Graduação em Ciência e Engenharia de Materiais, Universidade Federal de Sergipe, Av.Marechal Rondon, São Cristóvão 49000-100, Brazil 3 Departamento de Física, Univ.Federal do Ceará, P.O.Box 6030, Fortaleza, 60440-900, Brazil ABSTRACT Fabrication of graphene nanostructures it is important for both investigating their intrinsic physical properties and applying them into various functional devices. In this work we present a study on atomic layer deposition (ALD) of Al2O3 to produce patterned graphene through area-selective chemical vapor deposition (CVD) growth. A systematic parametric study was conducted to determine how the number of cycles and the purging time affect the morphology and the electrical properties of both graphene and Al2O3 layers. INTRODUCTION Producing large-scale graphene films with controllable patterns is an essential step of graphene-based nanodevice fabrication [1]. The patterning of graphene is a powerful approach for tuning its physical and electronic structure and for device-integration, including ultrahigh frequency analog amplifiers [2] and electrical interconnects [3]. Several methods have been reported for patterning graphene films, including chemical vapor deposition through a mask [4] and electron-beam lithography [5]. However, problems associated with large-scale pattern growth of graphene by these techniques constitute one of the main obstacles for using graphene in device applications [4]. The main drawbacks are concern the rough edges of the graphene pattern and resist residues on graphene surface which can considerably degrade graphene properties [6]. Besides that, current methods of graphene pattern preparation involve high cost, low throughput patterning processes and sophisticated instruments, which can potentially hinder their large-scale fabrication and practical applications [1]. In parallel with top-down based approach to nanotechnology, significant advances in the bottom-up approaches [7,8] or directly patterning graphene [6,9] have made it possible to produce patterns with long-range order. On directly patterning graphene, since the patterning step is carried out before graphene growth, the amount of contamination is potentially minimized, which could produce higher quality graphene devices. In a previous work we developed a technique that could generate patterned graphene through area-selective CVD growth [6]. The method relied on pattern defined regions of Cu foil or Cu thin film, using ink-jet printing as deposition technique and aluminum hydroxide as passivation layer. The refratory nature of Al2O3 prevents it from interacting with the growth substrate and inhibits reshaping of the passivation layer under high
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