Design of Dual-Gate P-type IMOS Based Industrial Purpose Pressure Sensor
- PDF / 1,024,007 Bytes
- 8 Pages / 595.276 x 790.866 pts Page_size
- 83 Downloads / 167 Views
ORIGINAL PAPER
Design of Dual-Gate P-type IMOS Based Industrial Purpose Pressure Sensor Leo Raj Solay 1 & Sarabdeep Singh 2
&
Naveen Kumar 2 & S. Intekhab Amin 3 & Sunny Anand 1
Received: 4 August 2020 / Accepted: 14 October 2020 # Springer Nature B.V. 2020
Abstract In this treatise, we have proposed a Single Material Gate–Dual Gate Impact Ionization Metal Oxide Semiconductor (SMG DGIMOS) based Pressure Sensor. The pressure sensor has the most notable role in both the electrical and mechanical emerging fields. This article grants the outline and scrutiny of pressure sensors on SMG-DG IMOS technology. The proposed device uncovers the hypothetical and practical concepts that can be effective for the future pressure sensor. Different ranges of bending: Low, Medium and High, have been employed to the proposed pressure sensor device. Several performance parameters under the ranges of bending have been investigated. The device structure has been developed with SiO2 as the gate oxide, a gate metal with work function 4.26 eV and a gate length of 130 nm while proposing the IMOS based pressure sensor design. The proposed sensor design is then investigated for different metals to explore the compatibility of the IMOS structure for different ranges of bending. The optimization of the proposed IMOS based pressure sensor has been carried out for broad sensing range and better sensitivity. Keywords Single material gate (SMG) . Dual gate (DG) . Impact Ionization MOS . Pressure Sensor . Micro electro-mechanical systems (MEMS)
1 Introduction From the past decade, Micro Electro Mechanical Systems (MEMS) technology wheedled many innovations particularly in the field of miniaturized sensors and actuators. There are many pressure sensors available in recent times. The efficiency of the pressure sensor to sense, analyse, compute and control has turned into a trademark innovation of the modern era [1]. From the past times, there have been many improvements in Micro Electro Mechanical Systems (MEMS) technology like fabrication of suspended structures that bend under pressure variation [2, 3]. The process of the pressure sensor is carried out by two major techniques namely, bulk micromachining and surface micromachining. Thin membranes are fabricated by bulk micromachining process whereas surface micromachining uses the deposition of the * Sarabdeep Singh [email protected] 1
Amity University, Noida, UP, India
2
National Institute of Technology, Jalandhar, Punjab, India
3
Jamia Milia Islamia Technological University, Delhi, India
sacrificial layer to fabricate suspended structures [4, 5]. Adaption of pressure sensors upon the devices has been widely used in many areas for various purposes starting from the automotive industry [6, 7] to biomedical applications [8, 9]. An important aspect of MEMS-based devices in mechanical structures merged with motion and the electrical signal. The MEMS pressure sensor is classified into capacitive and piezoresistive in terms of measurement criteria [10]. The MEMS-based devices have perceiv
Data Loading...
