Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealin
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IC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Dislocation-Related Luminescence in Single-Crystal Silicon Subjected to Silicon Ion Implantation and Subsequent Annealing N. A. Soboleva^, A. M. Emel’yanova, V. I. Sakharova, I. T. Serenkova, E. I. Sheka, and D. I. Tetel’baumb aIoffe
Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia ^e-mail: [email protected] bResearch Physicotechnical Institute, Lobachevskiœ State University, Nizhni Novgorod, 603950 Russia Submitted September 11, 2006; accepted for publication October 3, 2006
Abstract—Implantation of silicon ions with an energy of 100 keV at a dose of 1 × 1017 cm–2 into n-type floatzone Si does not lead to the formation of an amorphous layer. Subsequent annealing in a chlorine-containing atmosphere at 1100°C gives rise to dislocation-related luminescence. The intensity of the dominant D1 line peaked at a wavelength of ~1.54 µm grows as the annealing time is increased from 15 to 60 min. PACS numbers: 61.72.Tt, 78.55.Ap, 78.55.Qr DOI: 10.1134/S1063782607050107
1. INTRODUCTION Compared with light-emitting diodes (LEDs) based on edge-type or erbium-related luminescence, silicon LEDs with dislocation-related luminescence are characterized by the best combination of such parameters as the external quantum efficiency of electroluminescence (η) and operation speed. For example, LEDs with η ≈ 0.1% and response time of ~2 µs have been fabricated [1]. The following methods have been used to produce light-emitting structures with dislocationrelated luminescence: uniaxial compression [1], laserinduced recrystallization [2], liquid-phase epitaxy [3], bending deformation [4], and formation of oxygen precipitates [5]. The nonuniform introduction of structural defects over the sample area, poor reproducibility of the occurring processes, and formation of a rather large number of centers responsible for emission in the 1.1– 1.6 µm range (a whole set of lines named D1–D15 [2–6]) are inherent in these techniques to a varied extent. We have suggested and studied in some detail a method for fabrication of LEDS with dislocation-related luminescence, based on implantation of high-energy (~1 MeV) heavy erbium ions and subsequent high-temperature annealing in an oxidizing atmosphere [7, 8]. This method is free of the above disadvantages and gives rise to only two lines: D1 (~1.54 µm) and D2 (~1.42 µm). Of unquestionable interest is an analysis of the possibility of fabrication of light-emitting structures with dislocation-related luminescence by implantation of comparatively light ions. Recently, we have observed dislocation-related luminescence in Si implanted with oxygen ions with energies of 100–1500 keV and then annealed at 900°C in a chlorine-containing atmosphere for 4 h [9]. A photoluminescence (PL) in the spectral
range 700–1000 nm has been observed upon irradiation of silicon with extremely large doses of inert gas ions (Ne) [10]. This indicates that a nanocrystalline structure is formed, which should favor the formation of extended defect
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