Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vici
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LECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION)
Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates M. O. Petrushkova,*, D. S. Abramkina,b, E. A. Emelyanova, M. A. Putyatoa, A. V. Vaseva, D. I. Loshkareva, M. Yu. Yesina, O. S. Komkovc, D. D. Firsovc, and V. V. Preobrazhenskiia a Rzhanov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia b Novosibirsk State University, Novosibirsk, 630090 Russia c St. Petersburg State Electrotechnical University “LETI”, St. Petersburg, 197376 Russia *e-mail: [email protected] Received August 3, 2020; revised August 10, 2020; accepted August 10, 2020
Abstract—GaSb films are grown by molecular-beam epitaxy using AlSb/As/Si transition layers on vicinal Si(001) substrates miscuted by 6° in (111) plane direction. The effect of GaSb films crystallographic orientation on their structural properties and surface morphology is investigated. It is found that the GaSb(001 )/Si films are characterized by better structural perfection, a lower concentration of point defects, as well as a more planar and isotropic surface morphology as compared with the GaSb(001) films. The possible cause for the observed othernesses between the GaSb films with different orientations is an increased density of antiphase domains in GaSb(001) films. The morphological features of the grown films are caused mainly by the edges of terraces and, to a lesser extent, by anisotropy of the incorporation of Ga adatoms into the edges of the terraces. Keywords: molecular-beam epitaxy, GaSb on Si(001), film crystallographic orientation, structural perfection, surface morphology DOI: 10.1134/S1063782620120295
1. INTRODUCTION Recently, much attention has been paid to the development of various IR optoelectronic devices based on AIIISb such as lasers, LEDs, photodiodes, etc. [1–3]. The structures for devices based on AIIISb are usually grown on expensive GaSb substrates, which are also characterized by low mechanical strength. In this regard, the development of a technology for producing thin high-quality GaSb layers on cheap and durable Si substrates is an urgent task. The use of artificial epitaxial GaSb/Si substrates significantly reduces the cost of AIIISb-based optoelectronic devices and facilitates their use for a wide range of applications. In addition, the integration of near- and mid-IR optoelectronic devices based on GaSb and silicon electronics opens up the prospect for the significant acceleration of information processing due to data transmission over an optical channel [4]. During the heteroepitaxy of III–V compounds on silicon, both point and extended structural defects are formed in the bulk of the film, which reduce the operating properties of artificial III–V/Si substrates. The main extended structural defects are misfit dislocations (MDs) and antiphase boundaries (APBs). The
cause for the occurrence of MDs is the relaxation of mechanical stres
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