Electronic Materials Conference Held in Newark
- PDF / 538,246 Bytes
- 3 Pages / 604.8 x 806.4 pts Page_size
- 75 Downloads / 173 Views
Electronic Materials Conférence Held in Newark The second International Conférence on Electronic Materials (ICEM-90) was held in Newark, New Jersey, September 17-19, 1990, under the co-sponsorship of the Materials Research Society, the European Materials Research Society, and the Japan Society of Applied Physics. The conférence focused on emerging electronic materials impacting the electronics industry in the 21st century. Four topical areas were covered: materials for high Tc superconducting electronics, materials for optoelectronics, advanced thin film technology, and diamond for electronic and optical applications. To maximize cross-disciplinary interactions no parallel sessions were held, and poster sessions were interspersed between oral sessions. H. Watanabe of NEC Corporation gave the after-banquet talk, "Toward a SingleAtom-Manipulated Materials Science." The conférence was chaired by R.RH. Chang, Northwestern University, Takuo Sugano, University of Tokyo, andVanTran Nguyen,CNETCNS. Below are highlights from two of the four sessions. For more detailed information on the conférence, contact the Materials Research Society for the proceedings.
Optoelectronics T. Kobayashi reported on some of the récent progress in the physics of nonlinear optical behavior in organic materials such as polydiacetylene and polythiophene. Such materials are potentially useful for future ultrafast all-optical switching devices. The talk was a refreshing reminder of the long-term potential of materials other than semiconductors, while at the same time showing that much of the basic physics is common to thèse différent fields. J. Volkl gave an overview of the importance of and issues in substrate materials for optoelectronics, such as GaAs and InP. Some of the issues still relate to the purity of the starting éléments. One goal is to make semi-insulating InP without having to dope it with Fe. Récent research has achieved promising results. Uniformity of substrate doping and dislocation density are still very important issues for devices, affecting both yield and performance. \61kl emphasized that achieving significant progress in the difficult task of growing improved substrate materials will require more extensive coopération in the growth community. U. Koren discussed the sophisticated growth and fabrication techniques used in making photonic integrated circuits. Such* circuits consist of integrated combinations
MRS BULLETIN/MAY 1991
of semiconductor lasers, photodetectors, waveguides, modulators, amplifiers, and filters. This kind of intégration will be important for improving the functionality and performance of optoelectronic Systems as well as reducing cost. Koren described one particular process starting with the growth of a complex layer structure including quantum well layers. This single structure can subsequently be processed by a combination of techniques to make several différent components together in the same structure. One example circuit contained four différent tunable lasers combined through waveguide couplers i
Data Loading...
