Growth of Epitaxial InAs Nanowires in a Simple Closed System
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Growth of Epitaxial InAs Nanowires in a Simple Closed System Hyun D. Park1*, Sharka M. Prokes2, and Robert C. Cammarata1 Department of Materials Science & Engineering, Johns Hopkins University, Baltimore, Maryland 21216 2 U.S. Naval Research Laboratory, Washington, DC 20375 * IC PostDoc Fellow 1
ABSTRACT The epitaxial growth of InAs nanowires on an InAs (111) substrate in a sealed quartz tube is described. The method is quite simple and fast, and uses only a bare InAs substrate and a gold colloid coated InAs (111) substrate. High quality InAs nanowires can be produced by this technique. INTRODUCTION There has been a rapid advance in recent years in the methods available for fabricating various nanowires. For InAs in particular, it is an attractive semiconductor for application in high performance electronics due to its high electronic mobility. Several methods of InAs nanowires and whisker growth have been reported, including metalorganic vapor phase epitaxy (MOVPE)[1] and chemical beam epitaxy (CBE),[2] in which the wires were grown epitaxially with the substrate. The growth of loose InAs wires has also been reported by laser-assisted catalytic growth (LCG)[3] and a vapor method using In metal and a GaAs substrate, with a growth time of 36 h.[4] In this paper, we report on a very simple and inexpensive method to grow InAs nanowires epitaxially over a large area on an InAs(111) wafer.[5] This growth technique results in high quality, stoichiometric InAs wires, and there is no need to prefabricate complex target materials, use toxic gases or solid As sources, nor subject the sample to lengthy growth times. In our growth method, we use only a bare InAs substrate and a gold colloid-coated InAs(111) substrate inside a sealed quartz tube. Our method is strictly based on the utilization of the temperature gradient that exists inside the furnace, where the source substrate evaporating at the hotter temperature region provides vapor for the nanowire growth in the lower temperature region. EXPERIMENTAL DETAILS The InAs nanowires were grown inside the sealed quartz tube in the open tube furnace. The diameter of the furnace opening is 10.16 cm. The native oxide on the InAs substrates was removed by chemical etching in HCl:H20 (1:10). The cleaned substrate was then quickly dipped into 0.1 % w/v Poly-L Lysine, rinsed, dipped in gold colloid particle solution (Ted Pella), rinsed in DI water, and finally nitrogen gas dried. For this work, 20nm, 60 nm and 100 nm sized gold colloid particle solution was used. The goldcolloid coated and bare InAs substrates were then placed inside a quartz tube (10 mm in diameter), evacuated to 60 mTorr and sealed with a torch. The center of the furnace was raised to 875 oC, and the quartz tube was inserted into the furnace. Inside the quartz tube,
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the bare InAs substrate was positioned at the hottest point in the furnace, while the goldcolloid coated InAs(111) substrate was place downstream at the temperature 580oC. The quartz tube was then annealed for 30 mins. Af
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