High Quality Oxide Film Formation by 02 Cluster Ion Assisted Deposition Technique
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HIGH QUALITY OXIDE FILM FORMATION BY 02 CLUSTER ION ASSISTED DEPOSITION TECHNIQUE J. Matsuo*, W. Qin*, M. Akizuki*,**, T. Yodoshi** and 1.Yamada* ,Ion Beam Engineering Experimental Laboratory, Kyoto University Sakyo, Kyoto 606-01, Japan ** Microelectronics Research Center, SANYO Electric Co., Ltd. 180 Ohmori, Anpachi-cho, Anpachi-Gun, Gifu 503-01, Japan, ABSTRACT A new oxide film formation technique using gas-cluster ion beams has been developed. 02 cluster ions were used to irradiate during the evaporation of metal atoms, and PbOx and In 20 3 films were grown. At the acceleration voltages above 5 kV, polycrystalline PbOx films preferentially oriented to (111) were obtained. A significant smoothing effect was observed with an acceleration voltage as low as 1 kV. An average surface roughness of 0.9 nm was obtained at 7 kV. Oxygen cluster ion beams are also utilized to grow In 20 3 films, which are widely used as conductive-transparent films in flat panel display. In20 3 was deposited on glass or silicon substrates with simultaneous irradiation with an oxygen cluster ion beam. Highly transparent (80%) and low resistivity (
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