In-situ Rapid Isiheial Pocessing of Thin Epitaxial Dieleciric Films on Silicon and Compound Semi Semiconductors
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IN-SITU RAPID ISIHEIAL POCESSING OF THIN EPITAXIAL DIELECIRIC FIIMS ON SILICON JC1ORS AND CaMPUND SEMI R. SINE, F. RADPOUR, J. NARAYAN*, S.P. JOSHI, M. RAHATI, S. ANDUMA.KUAN AND S.K. KAHNG School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019 *Materials Science and Engineering Department, North Carolina State University, Raleigh, NC 27695-7916 ABSTRACr We have developed a new rapid isothermal processing technique for the deposition of epitaxial dielectric films (II-VIa fluorides and their mixtures) on silicon and ccmpound semiconductors. In this process, epitaxial dielectric films are deposited in an e-beam system at room teqperature and subsequently subjected to in-situ rapid isothermal annealing by using incoherent light sources incorporated in the e-beam system. Epitaxial dielectric films of CaF 2 and CaxSr. F 2 have been In this paper, prelimilifty results of deposited on Si, GaAs and InP. electrical and structural characteristics of. epitaxial dielectric films on Si and cupourd semiconductors are presented.
INmwCrION Since the first reported growth of epitaxial dielectrics on semiconductors by Farrow, et al. [1], heteroepitaxial growth of II-A fluorides on elemental and compound semiconductors has generated considerable research interest in recent years [2]. These fluorides (CaF 2 , BaF 2 , SrF2 and their mixtures) crystallize in the cubic fluorite crystals which are closely related to diamond and zinc blend structures of common semiconductors. Epitaxial dielectrics have a wide range of potential applications such as gate, isolation and passivation dielectric materials for Si and coumpound semiconductor devices, superstrate/substrate material for semiconductor-on-insulator (SOI) technology and more advanced structures like microelectronic and cptoelectronic devices on the same chip [3]. Ultra thin heterostructure epitaxial dielectric film of CaF2 [4] are potential gate dielectric materials for the memory cell of 16 Hbit ERAM. In general, MB and vacuum deposition techniques are being enployed for the epitaxial growth of II-VIa fluorides on semiconductor substrate maintained between about 400 and 9000C during the deposition of dielectric material. With the typical deposition rate of about 1-2 X/s, 8-10 minutes
are required to deposit 1000 A of dielectric material.
This type of
prolonged heating may not be suitable for future submicron and threedimensional Si IC's, as well as for compound semiconductor devices. We have developed a new low tmpe-rature processing technique for the deposition of epitaxial dielectric films on Si and compound semiconductors. In this process, epitaxial dielectric films are deposited in an e-beam system at room teuperature and subsequently subjected to insitu rapid isothermal annealing by using incxherent light sources
incorporated in the e-beam system. paper deal
with CaF 2/Si
Most of the results presented in this
structure
with
some preliminary
CaF 2/GaAs, QaxSr 1 -F2/GaAs and CaF 2/InP structures.
Mat. Res. Soc. Syrp. Proc. Vol.
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