Optimization and characterization of silicon nano-grass antireflection layer on textured silicon wafer
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Optimization and characterization of silicon nano‑grass antireflection layer on textured silicon wafer Soma Ray1,2 · Anup Mondal3 · Utpal Gangopadhyay1 Received: 18 March 2020 / Accepted: 28 April 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract We propose in this paper silicon nano-grass layer as an alternative of conventional black silicon nanowire structure. Conventional metal-assisted chemical etching process by HF produces porous silicon nanowire structure. This is due to uncontrollable chemical reaction making long-heighted nanowires which causes detrimental effect on further solar cell processing. The shape and height of silicon nanostructure was reduced by new chemical solution to minimize the porosity. Silicon nanograss layer was grown on textured silicon surface and investigated in detail. The structure was formed by N H4F/H2SO4/H2O2 solution at room temperature. Substantial reflectance reduction with broadband spectral range was observed. The etching mechanism and the effect of etch constituents of the etching solution on the structure of nano-grass were studied elaborately. Reflectance and photoluminescence were studied accordingly, and the variations in the surface porosity and light absorbance property have been monitored. At the very end, a comparative study of conventional black silicon etching process by HF/ H2O2 and nano-grass on textured silicon by N H4F solution has been investigated. The etch rate and the optical superiority of nanostructures formed by both the solutions have been manifested and explained. For the commercial production level, silicon nano-grass structure is much persistent than silicon nanowire. Keywords Monocrystalline silicon · N-type · Silicon nano-grass (SiNG) field · Reflectance photoluminescence · Porosity
1 Introduction In recent decades, silicon is the most widespread material used in semiconductor technologies. There are lots of applications of silicon technology like photodetector, photovoltaic, photodetector, sensor, etc. [1–3]. The work mostly emphasizes on application of the nanostructure in solar photovoltaic area. It is already known solar cell technology depends on optical and electrical properties of the complete device [4, 5]. To enhance optical absorption antireflection coating is one of the major process sequences * Utpal Gangopadhyay [email protected] 1
Centre of Advanced Research in Renewable Energy and Sensor Technology, Meghnad Saha Institute of Technology, Nazirabad, Uchhepota, Via‑ Sonarpur, Kolkata, West Bengal 700150, India
2
Centre of Excellence for Green Energy and Sensor Systems, IIEST, Shibpur, Howrah 711103, India
3
Departments of Chemistry, IIEST, Shibpur, Howrah, West Bengal 711103, India
used to cut down the reflectance of the solar cell. Conventional quarter wavelength antireflective layers on silicon include SiNx, TiO2, etc., but one of the unavoidable constraints of these antireflective layers is their reducing reflectance capacity only at a certain spectral range [4–6]. Average refl
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