Pendeo Epitaxy Of 3C-SiC on Si Substrates
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Pendeo Epitaxy Of 3C-SiC on Si Substrates G.E. Carter,1 T. Zheleva,2 G. Melnychuck,1 B. Geil,2 K. Jones,2 and S. E. Saddow1 1
Emerging Materials Research Laboratory, Department of Electrical & Computer Engineering, MississippiState, MS 39762-9571 2 Sensors and Electron Devices Directorate, Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783-1197
Abstract Pendeo Epitaxy is a type of Lateral Epitaxial Overgrowth (LEO) that instead of using a dielectric buffer layer, uses an etched substrate to grow laterally without an interface layer. We report the first successful growth of 3C-SiC on Si using Pendeo epitaxy. Rectangular stripes of 3C-SiC on (100) Si substrates were fabricated, along both the [110] and [100] directions. Pendeo epi was only observed for columns parallel to [001], indicating a preferred growth facet for Pendeo epi of 3C-SiC on Si. SEM and TEM investigations were performed to assess the material quality of the Pendeo 3C-SiC material. Films were grown for 60 min at 1310°C and film coalescence was achieved without evidence of voids where the growth fronts joined. TEM data indicate not only the growth of vertical and lateral 3C-SiC on the 3C-SiC seed layer but direct nucleation of 3C-SiC on the exposed Si columns side wall and trench bottom, despite the lack of a carbonization procedure. The quality of the Pendeo 3C-SiC film appears to be of high quality indicating that Pendeo epi of 3C-SiC on low-cost, large-diameter Si substrates may prove to be a cost effective way to grow device-grade SiC layers on Si substrates for device applications. Introduction Cubic silicon carbide (i.e., 3C-SiC) has been grown epitaxially on both (100) and (111) Si substrates for many years [1,2]. While this work has resulted in single crystal 3C-SiC on Si substrates, the high degree of lattice mismatch (>20%) has resulted in films with a high level of defects, mostly twins for 3C-SiC grown on (100) Si [3]. Lateral epitaxial overgrowth (LEO) of 3-SiC on Si substrates has been reported but unfortunately the quality of the grown films was poor due to the high growth temperatures required to growth 3C-SiC [4]. Pendeo Epi (PE) growth in the GaN/SiC wide bandgap system has been successfully performed[5] indicating that this technique might be useful in the SiC/Si system to achieve high-quality device films despite the large lattice mismatch between Si and SiC [5]. A 3C-SiC Pendeo epi (PE) process is the next logical step towards achieving high-quality single-crystalline 3C-SiC films on low-cost, largearea Si substrates. This paper discusses our initial research towards this objective. Pendeo Epi Sample Preparation Pendeo epi (PE) growth of 3C-SiC on Si substrates begins with the growth of a base (i.e., ‘seed’) layer of 3C-SiC on Si. The Pendeo Epi process is depicted schematically in Figure 1. The base 3C-SiC layer was deposited on (100) Si using a dual precursor (silane and propane) growth process in a cold-wall, horizontal, atmospheric pressure chemical vapor deposition (APCVD) system in the Emerging Materials Res
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