Preparation and Characterization of Copper Film on Plastic Substrate by ECR-MOCVD Coupled with a DC Bias
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Preparation and Characterization of Copper Film on Plastic Substrate by ECR-MOCVD Coupled with a DC Bias Bup Ju Jeon and Joong Kee Lee Eco-Nano Research Center, Korea Institute of Science and Technology, P.O.Box 131, Cheongyang Seoul 130-650, Korea ABSTRACT Copper films were prepared at room temperature under a Cu(hfac)2-Ar-H2 atmosphere in order to obtain metallized plastics by using ECR-MOCVD (Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. Structural analysis of the films by ECR showed that fine copper grains were embedded in an amorphous plastic matrix with good adherence. Considering the AES result of the film prepared by ECR-CVD, we construe that the copper film is chemically bonded with a plastic substrate. The delamination force determined by the nano-scratch testerī showed in the range from 10 to 20mN. INTRODUCTION The advantages of both metal and plastic films have been incorporated into metallized film, makes application in many industrial fields, for example, microelectronic packing, flexible printed circuits, plastic solar cell, gas barrier and electromagnetic interference (EMI) shielding. The deposition of a metal film on plastic, particularly copper, is of considerable interest due to its low resistivity and resistance to electromigration. The employed conventional methods for the deposition of copper film on plastics are electrodeposition and evaporation (thermal and e-beam). Electrolytic and electroless process require extensive substrate preparation before deposition be carried out. Moreover, the use of hazardous chemicals and precious metal catalysts are necessary for these processes to obtain satisfactory conductor characteristics. Evaporation is technically difficult to get good selectivity and characteristics due to poor adhesion, substrate deformation and an aging effect. The adhesion of copper film to the plastic substrate is the most important and basic property in any application above mentioned. Thus, chemical vapor deposition processes for the preparation of copper films are of considerable significance since continuous deposition of large areas can be easily achieved with good adherence. However, the chemical vapor deposition is typically carried out at high substrate temperatures. Therefore it is not suitable for polymeric and other
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temperature sensitive substrates. Operating temperatures in the range of 150 to 200oC have to be used to prepared copper thin films from the organometallic precursors. The deposition of thin copper film on plastic substrates by the MOCVD (Metallic Organic Chemical Vapor Deposition) method at room temperature has never been tried. Recently, we found that MOCVD is possible at room temperature when periodic negative voltage is applied under ECR (Electron Cyclotron Resonance) plasma system. The periodic negative voltage induces ions and radicals to have nucleation reaction on the surface of the substrate. The high efficiency in exciting the reactants in ECR plasma coupled with periodic nega
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