Sensing of Non-Volatile Memory Demystified
This book introduces readers to the latest advances in sensing technology for a broad range of non-volatile memories (NVMs). Challenges across the memory technologies are highlighted and their solutions in mature technology are discussed, enabling innovat
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Sensing of Non-Volatile Memory Demystified
Sensing of Non-Volatile Memory Demystified
Swaroop Ghosh Editor
Sensing of Non-Volatile Memory Demystified
123
Editor Swaroop Ghosh School of Electrical Engineering and Computer Science Pennsylvania State University State College, PA, USA
ISBN 978-3-319-97345-6 ISBN 978-3-319-97347-0 https://doi.org/10.1007/978-3-319-97347-0
(eBook)
Library of Congress Control Number: 2018949886 © Springer International Publishing AG, part of Springer Nature 2019 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors, and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. This Springer imprint is published by the registered company Springer Nature Switzerland AG The registered company address is: Gewerbestrasse 11, 6330 Cham, Switzerland
Preface
Research, development, and commercialization of emerging non-volatile memories (NVMs) are being aggressively pursued by the design community to supplement and/or substitute conventional volatile and NV memory technologies that are facing stiff scalability challenges. The emerging NVMs such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Resistive RAM (RRAM) and Phase Change Memory (PCM) are already available in market as discreet chips. It has been forecasted by Yole that the emerging NVM market will continue to grow and find several niche applications in health care, banking, and day-to-day computing. One of the key aspects of the functioning of these NVMs is sensing. Since the emerging NVMs possess better reliability and faster access latency, they are positioned to replace embedded higher-level memory such as cache, main memory, and solid-state drives (SSDs). The well-known flash sensing techniques which are latency-intensive are not suitable for emerging NVMs. The sensing techniques for conventional charge-based memories such as SRAM and DRAM cannot be extended to emerging NVMs since majority of these memories are resistive in natur
