Silicon Carbide Nanostructures Fabrication, Structure, and Propertie
This book brings together the most up-to-date information on the fabrication techniques, properties, and potential applications of low dimensional silicon carbide (SiC) nanostructures such as nanocrystallites, nanowires, nanotubes, and nanostructured film
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Jiyang Fan Paul K. Chu
Silicon Carbide Nanostructures Fabrication, Structure, and Properties by Finite Element and Soft Computing Methods
Engineering Materials and Processes Series editor Brian Derby, Manchester, UK
More information about this series at http://www.springer.com/series/4604
Jiyang Fan Paul K. Chu •
Silicon Carbide Nanostructures Fabrication, Structure, and Properties
123
Paul K. Chu Department of Physics and Materials Science City University of Hong Kong Hong Kong China
Jiyang Fan Department of Physics Southeast University Nanjing China
ISSN 1619-0181 ISBN 978-3-319-08725-2 DOI 10.1007/978-3-319-08726-9
ISBN 978-3-319-08726-9
(eBook)
Library of Congress Control Number: 2014944324 Springer Cham Heidelberg New York Dordrecht London Ó Springer International Publishing Switzerland 2014 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. Exempted from this legal reservation are brief excerpts in connection with reviews or scholarly analysis or material supplied specifically for the purpose of being entered and executed on a computer system, for exclusive use by the purchaser of the work. Duplication of this publication or parts thereof is permitted only under the provisions of the Copyright Law of the Publisher’s location, in its current version, and permission for use must always be obtained from Springer. Permissions for use may be obtained through RightsLink at the Copyright Clearance Center. Violations are liable to prosecution under the respective Copyright Law. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. While the advice and information in this book are believed to be true and accurate at the date of publication, neither the authors nor the editors nor the publisher can accept any legal responsibility for any errors or omissions that may be made. The publisher makes no warranty, express or implied, with respect to the material contained herein. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com)
Preface
Although nanostructured silicon carbide is rapidly evolving, the field is still in the infancy stage and full potential of the materials is far from being realized. This book provides the state of the art of the various nanostructures of wide bandgap silicon carbide including nanoparticles, nanowires, nanotubes, porous structures, nanostructured films, and other complex nanostructures. Topics covered
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