Synthesis of Iron Oxynitride by Nitrogen Ion Implantation of Iron Oxide
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SYNTHESIS
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IRON OXYNITRIDE BY NITROGEN ION IMPLANTATION OF IRON OXIDE
S.B. OGALE, Seema TELI, Sunita CHOPDA, D.M. PHASE, S.M. KANETKAR. Department of Physics, University of Poona, Pune-41i 007, INDIA. ABSTRACT The effect of N2 + ion implantation in c(-Fe 2 O3 has been investigated by means of Conversion Electron Mossbauer Spectroscopy 17 2 (CEMS). It Is shown that at a dose value of Ix10 ions/cm and 3x1O 1 7 Ions/cm2 the samples exhibit new Interesting hyperfine features which can not be ascribed to known oxide or nitride phases. It Is thus concluded that Iron Oxynitrlde Is formed by the nitrogen Implantation process. INTRODUCTION In recent years there has been a great deal of Interest In oxynitridation process due to its potential Importance In silicon based Integrated circuit technology. Almost all previous Investigations have been carried out on the kinetics and mechanism of formation of silicon oxyn!tride thin films 11,21. However no attempt has yet been made to synthesize iron oxynitride; a structurally and chemically Integrated complex of the Fe-O-N system which is expected to derive It's properties from those of oxides as well as nitrides. Since various forms of Iron oxides and Iron nitrides have been well studied and utilized In various Interesting applications, It may be worthwhile to synthesize Iron oxynitride and investigate Its various properties. In the present paper, we report the results of our studies on nitrogen ion Implantation Inc
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