Thermal decomposition and chemical vapor deposition: a comparative study of multi-layer growth of graphene on SiC(000-1)
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Thermal decomposition and chemical vapor deposition: a comparative study of multi-layer growth of graphene on SiC(000-1) D. Convertino, A. Rossi, V. Miseikis, V. Piazza and C. Coletti MRS Advances / FirstView Article / August 2016, pp 1 - 6 DOI: 10.1557/adv.2016.369, Published online: 18 May 2016
Link to this article: http://journals.cambridge.org/abstract_S2059852116003698 How to cite this article: D. Convertino, A. Rossi, V. Miseikis, V. Piazza and C. Coletti Thermal decomposition and chemical vapor deposition: a comparative study of multi-layer growth of graphene on SiC(000-1). MRS Advances, Available on CJO 2016 doi:10.1557/ adv.2016.369 Request Permissions : Click here
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MRS Advances © 2016 Materials Research Society DOI: 10.1557/adv.2016.369
Thermal decomposition and chemical vapor deposition: a comparative study of multi-layer growth of graphene on SiC(000-1) D. Convertino1,2, A. Rossi1,2, V. Miseikis1, V. Piazza1, C. Coletti1,3 1 Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy 2 Laboratorio NEST – Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy 3 Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy ABSTRACT This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The topography of the samples was investigated by using atomic force microscopy (AFM), and scanning electron microscopy (SEM) was performed to examine the sample on a large scale. Raman spectroscopy was used to assess the crystallinity and electronic behavior of the multi-layer graphene and to estimate its thickness in a non-invasive way. While the crystallinity of the samples obtained with the two different approaches is comparable, our results indicate that the CVD method allows for a better thickness control of the grown graphene. INTRODUCTION Epitaxial growth of graphene by thermal decomposition of silicon carbide (SiC) is a classical and successful approach to obtain large-area continuous films directly on a semiinsulating substrate [1,2]. In this process the SiC crystal acts as precursor: heating of the substrate at temperatures above 1300 °C in an Argon (Ar) atmosphere causes Si sublimation, and the C atoms left behind rearrange in a honeycomb structure forming one or more layers of graphene. Notably, the two different basal planes of the hexagonal polytypes of SiC, known as SiC(0001) (Si-face) and SiC(000-1) (C-face), show significantly different growth modes for graphene [1]. In particular, the graphene layers typically obtained on the C-face lack a defined azimuthal orientation (i.e., turbostratic graphene) so that each layer behave
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