Rare-Earth Implanted MOS Devices for Silicon Photonics Microstructur
The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during
- PDF / 6,672,484 Bytes
- 188 Pages / 439.369 x 666.14 pts Page_size
- 69 Downloads / 259 Views
materials science
142
Springer Series in
materials science Editors: R. Hull C. Jagadish R.M. Osgood, Jr. J. Parisi Z. Wang H. Warlimont The Springer Series in Materials Science covers the complete spectrum of materials physics, including fundamental principles, physical properties, materials theory and design. Recognizing the increasing importance of materials science in future device technologies, the book titles in this series ref lect the state-of-the-art in understanding and controlling the structure and properties of all important classes of materials.
Please view available titles in Springer Series in Materials Science on series homepage http://www.springer.com/series/856
Lars Rebohle Wolfgang Skorupa
Rare-Earth Implanted MOS Devices for Silicon Photonics Microstructural, Electrical and Optoelectronic Properties
With 121 Figures
123
Dr. Lars Rebohle Dr. Wolfgang Skorupa Forschungszentrum Dresden-Rossendorf e.V. Institut f¨ur Ionenstrahlphysik und Materialforschung Bautzner Landstraße 400, 01328 Dresden, Germany E-mail: [email protected], [email protected]
Series Editors:
Professor Robert Hull
Professor J¨urgen Parisi
University of Virginia Dept. of Materials Science and Engineering Thornton Hall Charlottesville, VA 22903-2442, USA
Universit¨at Oldenburg, Fachbereich Physik Abt. Energie- und Halbleiterforschung Carl-von-Ossietzky-Straße 9–11 26129 Oldenburg, Germany
Professor Chennupati Jagadish
Dr. Zhiming Wang
Australian National University Research School of Physics and Engineering J4-22, Carver Building Canberra ACT 0200, Australia
University of Arkansas Department of Physics 835 W. Dicknson St. Fayetteville, AR 72701, USA
Professor R. M. Osgood, Jr.
Professor Hans Warlimont
Microelectronics Science Laboratory Department of Electrical Engineering Columbia University Seeley W. Mudd Building New York, NY 10027, USA
DSL Dresden Material-Innovation GmbH Pirnaer Landstr. 176 01257 Dresden, Germany
Springer Series in Materials Science ISSN 0933-033X
ISBN 978-3-642-14446-2 e-ISBN 978-3-642-14447-9 DOI 10.1007/978-3-642-14447-9 Springer Heidelberg Dordrecht London New York Library of Congress Control Number: 2010938144 © Springer-Verlag Berlin Heidelberg 2010 This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specif ically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microf ilm or in any other way, and storage in data banks. Duplication of this publication or parts thereof is permitted only under the provisions of the German Copyright Law of September 9, 1965, in its current version, and permission for use must always be obtained from Springer. Violations are liable to prosecution under the German Copyright Law. The use of general descriptive names, registered names, trademarks, etc. in this publication does not imply, even in the absence of a specif ic statement, that such names are exempt from the relevant protective laws and regulations and therefore free for gene
Data Loading...
