Recent Progress of Low Temperature Poly Si Tft Technology
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ABSTRACT Since being introduced to the production line in 1996, replacing the first generation a-Si TFT line, low-temperature poly-Si production technology aimed at manufacturing small and medium size LCD products has improved steadily corresponding to customers' requirements for rapid growth of the DVC and DSC markets. In the future, this production technology must progress to actual industry technology levels in order to cope with production applied not only to large size displays, which have a major market share in the present display market, but also to a large glass substrate, which effectively cuts the cost of products, although improvement of production yield and productivity in terms of pursuing cost reduction must be proceeded. This paper has described existing problems of inherent low-temperature poly-Si TFT processes and their relating additional processes in present production methods. We have also discussed updating production technologies. To cope with production for a large size display, it is necessary to establish fabrication technology of higher performance TFTs with electron mobility larger than 200cm 2 /V s. We believe that one key technology is to fabricate a large-scale and highly-uniform recrystallized poly-Si film with smooth surface morphology as well as precisely-controlled grain size in production. To cope with production using a large glass substrate, it is essential to develop ELA equipment with laser power greater than 200W.
1. INTRODUCTION Low-temperature (LT) poly-Si TFT technology is of interest as an advanced TFT LCD technology because it offers the potential advantages of higher performance and higher reliability,
which can be achieved by high-temperature (HT) poly-Si TFT technology, as well as lower costs and higher productivity, which are major features of a-Si TFT technology. After nearly 10 years of devoted research and development, this technology was introduced to the production line in 1996. Since then, keeping the different competence against a-Si TFT technology, its production technology has steadily improved for manufacture aimed at small and medium-size LCD products which can effectively reflect the features of LT poly-Si TFT technology, e.g., built-in driver circuits, and high-definition, high-aperture ratio. Fortunately, corresponding to increases in customers requirements for high quality and high definition picture images needed for digital camcorders and digital still cameras, whose sales have recently increased rapidly, LT poly-Si TFT LCD has maintained high consumers popularity and diffused widely into the display monitor market. Currently, LT poly-Si TFT technology has prompted us to view possible business benefits so as to secure a position for it as an industry technology since production equipment for the inherent LT poly-Si TFT process have improved and progressed according to re-arrangement of infrastructure. In the future, this production technology must progress to actual industry technology levels in order to cope with production applied not only to la
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