Response analysis of MEMS based high-g acceleration threshold switch under mechanical shock
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Response analysis of MEMS based high-g acceleration threshold switch under mechanical shock Virender Singh . Vijay Kumar . Ashish Saini . P. K. Khosla . Sunita Mishra
Received: 30 July 2019 / Accepted: 27 August 2020 Ó Springer Nature B.V. 2020
Abstract Failures of MEMS devices under shock are due to the overlap of the static and moving parts. The shock response of the microstructure under mechanical shock is investigated in this paper. This work presents modelling and simulation of the microstructures such as microcantilever, fixed–fixed flexure and serpentine structure and is further extended to optimize the response of high-g acceleration threshold switch under mechanical shock. The latching threshold for the high-g acceleration switch is estimated using the geometrical structure. The natural frequency of the serpentine spring-mass structure is selected to achieve the required displacement for latching. The dimensions of the switch are optimized V. Singh Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India e-mail: [email protected] V. Kumar A. Saini P. K. Khosla Terminal Ballistic Research Laboratory, DRDO, Sector 30, Chandigarh 160030, India e-mail: [email protected] A. Saini e-mail: [email protected] P. K. Khosla e-mail: [email protected] S. Mishra (&) CSIR-Central Scientific Instruments Organisation, Sector30, Chandiagrh 160030, India e-mail: [email protected]
in accordance with the natural frequency and to meet the requirement of latching for a given shock. The switch is fabricated on silicon on insulator wafer with a deep reactive ion etching process. The switch is tested on the static mechanical shock of 3500 g and shows a good agreement between analytical, numerical and experimental results. Keywords Micrelectromehcanical system (MEMS) Transient vibration Single degree of freedom (SDOF) system Shock Non linear response Finite emement analysis (FEM) Silicon on insulator (SOI) Deep reactive ion etching (DRIE)
1 Introduction MEMS has emerged as one of the potential device to be used in the safing and arming devices, especially acceleration threshold switch. Monitoring the acceleration of a system can provide useful information about the leniency of an impact and the likelihood of damage due to this impact. The essential measure for MEMS devices is their survivability under high mechanical loading. Damage can occur due to the rigorous motion of the package containing MEMS device which further can lead to mechanical or electrical failure. Suspended microbeams can hit stationary electrodes in MEMS devices due to shock,
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leading to stiction (Tas et al. 1996) and short circuit problems (Tanner et al. 2000) which may result in the failure in the device functions. In the macro world, mechanical failure means fracture of the structures due to high stresses, but in MEMS it can occur through stiction and electric short circuits resulting from the dynamic contact between stationary and
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