Simulation of space charge limited organic non volatile memory elements
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ace charge limited organic non volatile memory elements Francesco Santoni, Alessio Gagliardi and Aldo Di Carlo MRS Proceedings / Volume 1430 / 2012 DOI: 10.1557/opl.2012.898
Link to this article: http://journals.cambridge.org/abstract_S1946427412008986 How to cite this article: Francesco Santoni, Alessio Gagliardi and Aldo Di Carlo (2012). Simulation of space charge limited organic non volatile memory elements. MRS Proceedings,1430, mrss121430e0306 doi:10.1557/opl.2012.898 Request Permissions : Click here
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Mater. Res. Soc. Symp. Proc. Vol. 1430 © 2012 Materials Research Society DOI: 10.1557/opl.2012.898
Simulation of space charge limited organic non volatile memory elements Francesco Santoni, Alessio Gagliardi and Aldo Di Carlo1 1 University of Rome “Tor Vergata”, Department of Electrical Engineering Via del Politecnico 1, PA 00133, Rome, Italy ABSTRACT We present a model for organic bistable devices (OBDs) embedded with metallic nanoparticles. In particular, two device architectures have been studied: a single layer device with metallic nanoparticles dispersed in a organic material matrix and a three layer device where two organic material regions are separated by a layer of heavy packed nanoparticles. The model describes the different behavior, the internal charge and potential distributions in the ON-OFF states. The OFF state is represented by charged nanoparticles forming a space charge layer which limits the current. The ON state occurs with neutral nanoparticles. INTRODUCTION Non-volatile organic thin film memory devices are being explored as a replacement to flash memory, especially when characteristics such as flexibility and low costs are required [1]. Organic memory devices (or OBD – organic bistable devices) have been explored using many different organic materials and device architectures [1]. The basic phenomenology common to many OBDs is as follows: there are two stable states in the IV-characteristics (Fig. 1) for which the corresponding value of current differs several orders of magnitude. The high current state is the ON-state and the low current state is the OFF-state. By increasing the applied voltage from zero, the device switches to the ON-state at a threshold voltage Vth. The current continues to increase until a voltage Vmax, then follows a region of negative differential resistance (NDR) and finally the current increases again after a voltage Vmin. If the voltage sweep scan do not pass Vmin then the device will remain in ON-state and will keep this state after removing the applied voltage. Retention times reported in literature varies from days to months. In particular, we studied two device architectures: a single layer device with metallic nanoparticles (NP) dispersed in a organic material matrix, and a three layer device where two organic materials regions are separated by heavy packed nanoparticles as in Fig. 2. The model takes into account only charge transport through the organic materi
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